Multi-Functional Molybdenum Oxide Doping to Improve the Electrical Characteristics of Indium Oxide Thin Film Transistors

IF 2.1 4区 材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY Electronic Materials Letters Pub Date : 2024-09-24 DOI:10.1007/s13391-024-00522-y
Kwan-Jun Heo, Jae-Yun Lee, Gergely Tarsoly, Sung-Jin Kim
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Abstract

This study investigates the utilization of MoO3 precursors to enhance the electrical properties and stability of In2O3 TFTs based on eco-friendly aqueous solutions. Specifically, MoO3 doped In2O3 (Mo-In2O3) TFTs were examined in this research. The Mo cation, hydroxide anion, and oxide radical of the MoO3 precursor provide free electrons to the In2O3 thin film, reducing the trap site between the semiconductor interface, the semiconductor and the insulator, and improving the stability of the device by adjusting the oxygen vacancy. To verify the change in the electrical properties of In2O3 TFT due to MoO3 doping, measurements of electron mobility after 30 days confirmed that In2O3 TFT electron mobility decreased by more than 80%, whereas Mo-In2O3 TFT electron mobility remained stable. PBS and NBS reliability evaluations confirmed that the Vth change of Mo- In2O3 TFT was less than that of In2O3 TFT. (In2O3 TFT PBS: 5.55 V, NBS: 0.33 V, Mo-In2O3 TFT PBS: 4.04 V, NBS: 0.10 V). In order to confirm the interface change of In2O3 film according to MoO3 Doping, the difference in surface roughness was measured using an AFM and found to be within 4%. In addition, the doping effect of the active layer was verified through changes in oxygen species in XPS analysis. To demonstrate its application as an active electronic device, a Mo-In2O3 TFT based resistance load inverter was evaluated, and the voltage transfer curve and excellent inversion characteristics of the inverter were confirmed under various VDD conditions.

Graphical Abstract

Kwan-Jun Heo et al., multi-functional molybdenum oxide doping to improve the electrical characteristics of indium oxide thin film transistors

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多功能氧化钼掺杂改善氧化铟薄膜晶体管电特性
本研究探讨了利用MoO3前驱体来提高基于环保水溶液的In2O3 tft的电学性能和稳定性。具体来说,本研究考察了MoO3掺杂的In2O3 (Mo-In2O3) tft。MoO3前驱体的Mo阳离子、氢氧阴离子和氧化自由基为In2O3薄膜提供了自由电子,减少了半导体界面、半导体与绝缘体之间的陷阱位,并通过调节氧空位来提高器件的稳定性。为了验证MoO3掺杂导致的In2O3 TFT电学性质的变化,30天后的电子迁移率测量证实In2O3 TFT电子迁移率下降了80%以上,而Mo-In2O3 TFT电子迁移率保持稳定。PBS和NBS可靠性评价证实Mo- In2O3 TFT的Vth变化小于In2O3 TFT。(In2O3 TFT PBS: 5.55 V, NBS: 0.33 V, Mo-In2O3 TFT PBS: 4.04 V, NBS: 0.10 V).为了证实MoO3掺杂后In2O3膜的界面变化,利用原子力显微镜测量了表面粗糙度的差异,发现差异在4%以内。此外,通过XPS分析中氧组分的变化验证了活性层的掺杂作用。为了证明其作为有源电子器件的应用,对基于Mo-In2O3 TFT的电阻负载逆变器进行了评估,并在各种VDD条件下验证了逆变器的电压传递曲线和优异的逆变特性。[图]许宽俊等,多功能氧化钼掺杂改善氧化铟薄膜晶体管的电学特性
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来源期刊
Electronic Materials Letters
Electronic Materials Letters 工程技术-材料科学:综合
CiteScore
4.70
自引率
20.80%
发文量
52
审稿时长
2.3 months
期刊介绍: Electronic Materials Letters is an official journal of the Korean Institute of Metals and Materials. It is a peer-reviewed international journal publishing print and online version. It covers all disciplines of research and technology in electronic materials. Emphasis is placed on science, engineering and applications of advanced materials, including electronic, magnetic, optical, organic, electrochemical, mechanical, and nanoscale materials. The aspects of synthesis and processing include thin films, nanostructures, self assembly, and bulk, all related to thermodynamics, kinetics and/or modeling.
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