Functionalization of Polymer Surfaces for Organic Photoresist Materials

IF 8.2 2区 材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY ACS Applied Materials & Interfaces Pub Date : 2025-01-13 DOI:10.1021/acsami.4c18270
Roberto C. Longo, Xiuyao Lang, Shyam Sridhar, Kyeongjae Cho, Peter L. G. Ventzek
{"title":"Functionalization of Polymer Surfaces for Organic Photoresist Materials","authors":"Roberto C. Longo, Xiuyao Lang, Shyam Sridhar, Kyeongjae Cho, Peter L. G. Ventzek","doi":"10.1021/acsami.4c18270","DOIUrl":null,"url":null,"abstract":"Photoresists are thin film materials designed to transform an optimal image into a mechanical mask. Diverse exposure techniques such as photolithography induce modifications in the exposed areas that result in solubility changes that can then be selectively removed with appropriate agents (developers). Photoresist materials need to keep pace with the increasingly demand for feature size reduction. Typically, photoresist materials are organic polymers that can present small cross sections to the incoming photons, resulting in poor trade-off between resolution, sensitivity, or line-edge roughness. Photoresists also require a high etch-resistance relative to the substrate material, in order to preserve patterned features after the mechanical mask has been created. The main strategy to improve polymer performance during such processes is functionalization with different elements that can deliver higher efficiencies while keeping the chemical reactivity of the original polymer design. Here we consider a photoresist polymer structure model with general characteristics and investigate the functionalization of the polymer surface using density-functional theory (DFT), with a focus on reactive halogen adsorption. Physical and chemical surface reactions and the corresponding byproducts are identified, obtaining self-limitation thresholds for each specific functionalizing agent. Moreover, spectral signals of the modified polymer surfaces are analyzed in detail, to allow experimental validation of the proposed surface modifications. Finally, using ab initio molecular dynamics (AIMD) and real time time-dependent DFT (rt-TDDFT), we study the interaction of energetic ions and electrons with the modified polymer surfaces, to validate the obtained functionalizations as effectively enhanced etch-resistance strategies. The computational results provide valuable insights on the complex physical, chemical, and dynamic ion and electron interactions with functionalized polymer photoresists, with the immediate consequence of allowing the extraction of definite strategies for improving photoresist polymer performance.","PeriodicalId":5,"journal":{"name":"ACS Applied Materials & Interfaces","volume":"21 1","pages":""},"PeriodicalIF":8.2000,"publicationDate":"2025-01-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ACS Applied Materials & Interfaces","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1021/acsami.4c18270","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0

Abstract

Photoresists are thin film materials designed to transform an optimal image into a mechanical mask. Diverse exposure techniques such as photolithography induce modifications in the exposed areas that result in solubility changes that can then be selectively removed with appropriate agents (developers). Photoresist materials need to keep pace with the increasingly demand for feature size reduction. Typically, photoresist materials are organic polymers that can present small cross sections to the incoming photons, resulting in poor trade-off between resolution, sensitivity, or line-edge roughness. Photoresists also require a high etch-resistance relative to the substrate material, in order to preserve patterned features after the mechanical mask has been created. The main strategy to improve polymer performance during such processes is functionalization with different elements that can deliver higher efficiencies while keeping the chemical reactivity of the original polymer design. Here we consider a photoresist polymer structure model with general characteristics and investigate the functionalization of the polymer surface using density-functional theory (DFT), with a focus on reactive halogen adsorption. Physical and chemical surface reactions and the corresponding byproducts are identified, obtaining self-limitation thresholds for each specific functionalizing agent. Moreover, spectral signals of the modified polymer surfaces are analyzed in detail, to allow experimental validation of the proposed surface modifications. Finally, using ab initio molecular dynamics (AIMD) and real time time-dependent DFT (rt-TDDFT), we study the interaction of energetic ions and electrons with the modified polymer surfaces, to validate the obtained functionalizations as effectively enhanced etch-resistance strategies. The computational results provide valuable insights on the complex physical, chemical, and dynamic ion and electron interactions with functionalized polymer photoresists, with the immediate consequence of allowing the extraction of definite strategies for improving photoresist polymer performance.

Abstract Image

查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
有机光刻胶材料高分子表面功能化研究
光阻剂是一种薄膜材料,用于将最佳图像转换为机械掩膜。不同的曝光技术,如光刻技术,会引起曝光区域的变化,从而导致溶解度的变化,然后可以用适当的试剂(显影剂)选择性地去除。光刻胶材料需要跟上日益增长的特征尺寸减小的需求。通常,光刻胶材料是有机聚合物,可以呈现小的入射光子的横截面,导致分辨率,灵敏度或线边缘粗糙度之间的差权衡。光阻剂还需要相对于基板材料的高耐蚀性,以便在创建机械掩膜后保留图案特征。在此过程中,提高聚合物性能的主要策略是使用不同的元素进行功能化,从而提高效率,同时保持原始聚合物设计的化学反应性。本文考虑了具有一般特征的光刻胶聚合物结构模型,并利用密度泛函理论(DFT)研究了聚合物表面的功能化,重点研究了反应性卤素吸附。确定了物理和化学表面反应及其相应的副产物,获得了每种特定功能化剂的自限制阈值。此外,对改性聚合物表面的光谱信号进行了详细的分析,以便对所提出的表面改性进行实验验证。最后,利用从头算分子动力学(AIMD)和实时时变DFT (rt-TDDFT),我们研究了高能离子和电子与改性聚合物表面的相互作用,验证了所获得的功能化是有效增强抗蚀刻性能的策略。计算结果为功能化聚合物光刻胶复杂的物理、化学和动态离子和电子相互作用提供了有价值的见解,直接结果是允许提取改善光刻胶聚合物性能的明确策略。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
ACS Applied Materials & Interfaces
ACS Applied Materials & Interfaces 工程技术-材料科学:综合
CiteScore
16.00
自引率
6.30%
发文量
4978
审稿时长
1.8 months
期刊介绍: ACS Applied Materials & Interfaces is a leading interdisciplinary journal that brings together chemists, engineers, physicists, and biologists to explore the development and utilization of newly-discovered materials and interfacial processes for specific applications. Our journal has experienced remarkable growth since its establishment in 2009, both in terms of the number of articles published and the impact of the research showcased. We are proud to foster a truly global community, with the majority of published articles originating from outside the United States, reflecting the rapid growth of applied research worldwide.
期刊最新文献
Cryogenic Magnetization Dynamics in Chemically Stabilized, Tensile-Strained Ultrathin Yttrium Iron Garnets with Tunable Magnetic Anisotropy. Ligand-Assisted Surface Doping of Colloidal Ag2S Nanocrystals for Efficient H2O2 Electrosynthesis via the Two-Electron Oxygen Reduction Reaction In Situ Electron Microscopy Study on Surface Etching/Growth Kinetics of Bi2Se3 Nanosheets Multimodal and Noninvasive Diagnosis of MNP-PEG-Gd Nanoprobe for Hepatic Fibrosis Based on Magnetic Resonance and Photoacoustic and Photoacoutic Microscopy Imaging Photothermal Fabrics Based on Biomimetic Mineralization of Natural Collagen Fiber Network for Thermal Management in Cold Environments
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1