Lumped-parameter modeling of MEMS hydrophone for different diaphragm geometries

IF 1.9 3区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Microelectronics Journal Pub Date : 2025-02-01 Epub Date: 2024-12-06 DOI:10.1016/j.mejo.2024.106511
Xin Wang, Hua Yang, Fei Sun, Ying Zhang, Beibei Mao
{"title":"Lumped-parameter modeling of MEMS hydrophone for different diaphragm geometries","authors":"Xin Wang,&nbsp;Hua Yang,&nbsp;Fei Sun,&nbsp;Ying Zhang,&nbsp;Beibei Mao","doi":"10.1016/j.mejo.2024.106511","DOIUrl":null,"url":null,"abstract":"<div><div>The geometry of hydrophone elements significantly influences array structure fill-factor and overall hydrophone performance. This study introduces an enhanced theoretical model for Microelectromechanical Systems (MEMS) piezoelectric hydrophone elements, comprehensively characterizing their performance across various geometries. Utilizing the Ritz method, our model provides a generalized solution for approximating mode shape functions of hydrophone elements with diverse shapes and boundary conditions. We derive electromechanical equivalent circuits through modal orthogonality, providing a new mathematical insight into the derivation process, while maintaining equivalence to traditional energy-based methods. The static receiving sensitivity expression is then obtained by analyzing the equivalent circuit’s system function. Our proposed model demonstrates satisfactory accuracy with significantly reduced computational demands compared to finite element method (FEM) based numerical models. This comprehensive theoretical framework offers valuable insights for optimizing element dimensions in MEMS hydrophones and piezoelectric micromachined ultrasonic transducers (PMUTs), potentially advancing the design and enhancing the performance of piezoelectric hydrophones.</div></div>","PeriodicalId":49818,"journal":{"name":"Microelectronics Journal","volume":"156 ","pages":"Article 106511"},"PeriodicalIF":1.9000,"publicationDate":"2025-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Microelectronics Journal","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1879239124002157","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"2024/12/6 0:00:00","PubModel":"Epub","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

Abstract

The geometry of hydrophone elements significantly influences array structure fill-factor and overall hydrophone performance. This study introduces an enhanced theoretical model for Microelectromechanical Systems (MEMS) piezoelectric hydrophone elements, comprehensively characterizing their performance across various geometries. Utilizing the Ritz method, our model provides a generalized solution for approximating mode shape functions of hydrophone elements with diverse shapes and boundary conditions. We derive electromechanical equivalent circuits through modal orthogonality, providing a new mathematical insight into the derivation process, while maintaining equivalence to traditional energy-based methods. The static receiving sensitivity expression is then obtained by analyzing the equivalent circuit’s system function. Our proposed model demonstrates satisfactory accuracy with significantly reduced computational demands compared to finite element method (FEM) based numerical models. This comprehensive theoretical framework offers valuable insights for optimizing element dimensions in MEMS hydrophones and piezoelectric micromachined ultrasonic transducers (PMUTs), potentially advancing the design and enhancing the performance of piezoelectric hydrophones.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
不同膜片几何形状的MEMS水听器集总参数建模
水听器元件的几何形状对阵列结构、填充系数和整体水听器性能有显著影响。本研究介绍了一个增强的微机电系统(MEMS)压电水听器元件的理论模型,全面表征了它们在各种几何形状下的性能。利用Ritz方法,我们的模型提供了近似具有不同形状和边界条件的水听器元件模态振型函数的广义解。我们通过模态正交推导机电等效电路,为推导过程提供了新的数学见解,同时保持了与传统基于能量的方法的等价性。通过分析等效电路的系统功能,得到静态接收灵敏度表达式。与基于有限元法(FEM)的数值模型相比,我们提出的模型具有令人满意的精度和显著减少的计算需求。这一全面的理论框架为优化MEMS水听器和压电微机械超声换能器(PMUTs)的元件尺寸提供了有价值的见解,有可能推进压电水听器的设计和提高其性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
Microelectronics Journal
Microelectronics Journal 工程技术-工程:电子与电气
CiteScore
4.00
自引率
27.30%
发文量
222
审稿时长
43 days
期刊介绍: Published since 1969, the Microelectronics Journal is an international forum for the dissemination of research and applications of microelectronic systems, circuits, and emerging technologies. Papers published in the Microelectronics Journal have undergone peer review to ensure originality, relevance, and timeliness. The journal thus provides a worldwide, regular, and comprehensive update on microelectronic circuits and systems. The Microelectronics Journal invites papers describing significant research and applications in all of the areas listed below. Comprehensive review/survey papers covering recent developments will also be considered. The Microelectronics Journal covers circuits and systems. This topic includes but is not limited to: Analog, digital, mixed, and RF circuits and related design methodologies; Logic, architectural, and system level synthesis; Testing, design for testability, built-in self-test; Area, power, and thermal analysis and design; Mixed-domain simulation and design; Embedded systems; Non-von Neumann computing and related technologies and circuits; Design and test of high complexity systems integration; SoC, NoC, SIP, and NIP design and test; 3-D integration design and analysis; Emerging device technologies and circuits, such as FinFETs, SETs, spintronics, SFQ, MTJ, etc. Application aspects such as signal and image processing including circuits for cryptography, sensors, and actuators including sensor networks, reliability and quality issues, and economic models are also welcome.
期刊最新文献
Modulating surface trapping and electric-field distribution in 0.1 μm GaN HEMTs via localized cap-layer engineering A new compensating Micro-LED pixel circuit with LTPO-based inverter for high resolution 8K displays A 10-bit 50-MS/s SAR ADC employing PN-assisted LMS calibration and robust register logic achieving 78.4-dB SFDR A 60V chopper amplifier achieving 3 μV VOS with adaptive input bias current compensation Linear and quadratic approximate mantissa dividers based on adaptively refined coefficient optimization
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1