Effect of fabrication conditions on Cu film formation on Al2O3 and AlN substrates by friction stirring

IF 2 4区 材料科学 Q3 MATERIALS SCIENCE, COATINGS & FILMS Thin Solid Films Pub Date : 2025-01-15 DOI:10.1016/j.tsf.2024.140599
Hirosuke Sonomura , Ryota Nonami , Gentoku Yoshida , Keigo Nakano , Kazuaki Katagiri , Tomoatsu Ozaki
{"title":"Effect of fabrication conditions on Cu film formation on Al2O3 and AlN substrates by friction stirring","authors":"Hirosuke Sonomura ,&nbsp;Ryota Nonami ,&nbsp;Gentoku Yoshida ,&nbsp;Keigo Nakano ,&nbsp;Kazuaki Katagiri ,&nbsp;Tomoatsu Ozaki","doi":"10.1016/j.tsf.2024.140599","DOIUrl":null,"url":null,"abstract":"<div><div>The conditions for Cu film formation by friction stirring on Al<sub>2</sub>O<sub>3</sub> and AlN substrates were investigated to develop a Cu circuit pattern formation technology. Different consumable tool geometries resulted in different processing interface temperatures, which had a significant effect on Cu film formation. A Cu film was formed effectively on the AlN substrate, which had high thermal conductivity, by heating the substrate at 100 °C. Finite element simulation revealed that when the substrate was heated at 100 °C, the processing interface temperature was 78 °C higher, even with a weak tool pushing force of 0.3 kN. The rod tool roughened the substrate surface more than the pipe tool, and the Cu film was mechanically bonded to the substrate with higher adhesion strength. Friction stirring was confirmed to be an effective tool for Cu circuit pattern formation.</div></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"810 ","pages":"Article 140599"},"PeriodicalIF":2.0000,"publicationDate":"2025-01-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Thin Solid Films","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0040609024004000","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, COATINGS & FILMS","Score":null,"Total":0}
引用次数: 0

Abstract

The conditions for Cu film formation by friction stirring on Al2O3 and AlN substrates were investigated to develop a Cu circuit pattern formation technology. Different consumable tool geometries resulted in different processing interface temperatures, which had a significant effect on Cu film formation. A Cu film was formed effectively on the AlN substrate, which had high thermal conductivity, by heating the substrate at 100 °C. Finite element simulation revealed that when the substrate was heated at 100 °C, the processing interface temperature was 78 °C higher, even with a weak tool pushing force of 0.3 kN. The rod tool roughened the substrate surface more than the pipe tool, and the Cu film was mechanically bonded to the substrate with higher adhesion strength. Friction stirring was confirmed to be an effective tool for Cu circuit pattern formation.
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来源期刊
Thin Solid Films
Thin Solid Films 工程技术-材料科学:膜
CiteScore
4.00
自引率
4.80%
发文量
381
审稿时长
7.5 months
期刊介绍: Thin Solid Films is an international journal which serves scientists and engineers working in the fields of thin-film synthesis, characterization, and applications. The field of thin films, which can be defined as the confluence of materials science, surface science, and applied physics, has become an identifiable unified discipline of scientific endeavor.
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