Rapid TLPD bonding of highly reliable full (Cu,Ni)6Sn5 IMC micro-joints using Cu-8Ni substrate for power device packaging

IF 4.3 2区材料科学 Q2 CHEMISTRY, PHYSICAL Intermetallics Pub Date : 2025-01-29 DOI:10.1016/j.intermet.2025.108675

Yanqing Lai , Gaosong Li , Meiping Liu , Shuai Zhang , Yuanyuan Qiao , Yuanwei Jia , Ning Zhao

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Abstract

The full intermetallic compound (IMC) micro-joints formed by transient liquid phase diffusion (TLPD) bonding technology are playing an increasingly key role in power device packaging. In this investigation, the highly reliable full (Cu,Ni)₆Sn₅ IMC micro-joints with Cu-8Ni as the substrates was rapidly fabricated. Replacing Cu with Cu-8Ni alloy as the substrate not only greatly accelerated the growth of fine (Cu,Ni)₆Sn₅ grains during bonding, but also completely suppressed the formation of brittle Cu₃Sn layer and Kirkendall voids during aging. The microstructure, elemental distribution, grain features, mechanical properties and fractural micromorphology of the full IMC micro-joints after bonding and aging were systematically investigated. Moreover, the refinement and rapid growth mechanism of the (Cu,Ni)₆Sn₅ IMC grains was discussed in detail. The obtained full IMC micro-joints only consisting of fine (Cu,Ni)₆Sn₅ grains presented an excellent thermostability. The shear strength of the full (Cu,Ni)₆Sn₅ micro-joints slightly dropped from 71.87 MPa before aging to 67.63 MPa after aging at 200 °C for 400 h. The highly reliable full (Cu,Ni)₆Sn₅ micro-joints with Cu-8Ni as the substrates obtained by TLPD bonding was proved to be an effective method, which could dramatically decrease bonding time and enhance the thermostability and reliability of the full IMC micro-joints in third-generation semiconductor power device packaging.

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通过瞬态液相扩散（TLPD）键合技术形成的全金属间化合物（IMC）微接头在功率器件封装中发挥着越来越关键的作用。在这项研究中，以 Cu-8Ni 为基底的高可靠性全 (Cu,Ni)6Sn5 IMC 微连接被快速制造出来。以 Cu-8Ni 合金取代铜作为基材，不仅大大加快了接合过程中细小（Cu,Ni）6Sn5 晶粒的生长，而且完全抑制了老化过程中脆性 Cu3Sn 层和 Kirkendall 空洞的形成。我们系统地研究了全 IMC 微接头在键合和老化后的微观结构、元素分布、晶粒特征、力学性能和断口微观形态。此外，还详细讨论了（Cu,Ni）6Sn5 IMC 晶粒的细化和快速生长机制。仅由细小的（Cu,Ni）6Sn5 晶粒组成的全 IMC 微接合呈现出极佳的热稳定性。以 Cu-8Ni 为基底，通过 TLPD 键合获得的高可靠性全 (Cu,Ni)6Sn5 微连接被证明是一种有效的方法，可显著缩短键合时间，提高全 IMC 微连接在第三代半导体功率器件封装中的耐热性和可靠性。

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来源期刊

Intermetallics 工程技术-材料科学：综合

CiteScore

7.80

自引率

9.10%

发文量

291

审稿时长

37 days

期刊介绍： This journal is a platform for publishing innovative research and overviews for advancing our understanding of the structure, property, and functionality of complex metallic alloys, including intermetallics, metallic glasses, and high entropy alloys. The journal reports the science and engineering of metallic materials in the following aspects: Theories and experiments which address the relationship between property and structure in all length scales. Physical modeling and numerical simulations which provide a comprehensive understanding of experimental observations. Stimulated methodologies to characterize the structure and chemistry of materials that correlate the properties. Technological applications resulting from the understanding of property-structure relationship in materials. Novel and cutting-edge results warranting rapid communication. The journal also publishes special issues on selected topics and overviews by invitation only.