Role of annealing temperature in synthesis and characterization of Li0.2Zn0.6Fe2.2O4 for photocatalytic dye degradation

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Materials Science: Materials in Electronics Pub Date : 2025-02-05 DOI:10.1007/s10854-025-14353-6
J. R. Nagarale, R. S. Pedanekar, V. V. Ganbavle, V. G. Parale, K. Y. Rajpure, S. N. Kulkarni
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Abstract

In this study, we investigate the optimization of lithium zinc ferrite (Li0.2Zn0.6Fe2.2O4) for enhanced photocatalytic degradation of dyes. Synthesized through sol-gel auto-combustion and subjected to annealing at various temperatures (400 ℃, 500 ℃, and 600 ℃), the nanoferrite underwent comprehensive characterization. XRD confirmed the formation of a cubic structure with a crystallite size ranging from 20 to 30 nm. FTIR elucidated characteristic two prominent M-O bonding bands at 437 cm-1 and 544 cm-1, affirming the nanoferrite's structural integrity. XPS revealed the chemical environment of the constituent elements and the oxidation state of iron (Fe+3) was confirmed. Morphological analysis conducted via SEM revealed a distinct cubic morphology and average grain size of about 170 nm were calculated. HRTEM provided detailed insights into the crystalline lattice, highlighting the presence of the (311) plane of spinel ferrite with d-spacing 0.256 nm. Additionally, UV-DRS gives Bandgap energy of prepared samples. Notably, annealing at 500 ℃ resulted in exceptional photocatalytic activity, with nearly 90% degradation of RhB achieved after 80 minutes of light irradiation and nearly 85% degradation of MB dye after 140 min. These findings underscore the potential of annealed Li-Zn nanoferrite spinel as a promising photocatalyst for environmental remediation applications.

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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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