{"title":"Multiple threshold displacement energy in Non-Ionizing Energy Loss calculations for compound semiconductors","authors":"C. Inguimbert","doi":"10.1016/j.nimb.2025.165622","DOIUrl":null,"url":null,"abstract":"<div><div>The traditional approach to evaluate the Displacement Damage Dose (DDD) effects in irradiated materials hinges on the concept of Non-Ionizing Energy Loss (NIEL). Historically, this method uses a single atomic displacement threshold energy (E<sub>d</sub>) as a benchmark. But a single E<sub>d</sub> just doesn’t cut it when it comes to accurately capturing the damage caused by electrons. To tackle this shortcoming, a more refined technique has been devised—one that introduces a spectrum of threshold energies into the NIEL calculations. Initially crafted for monatomic materials, this method has now been tailored for compound materials. Here, we propose updated NIEL values for certain III-V semiconductors and compare them with experimental damage factors, particularly emphasizing the effects of electron interactions.</div></div>","PeriodicalId":19380,"journal":{"name":"Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms","volume":"561 ","pages":"Article 165622"},"PeriodicalIF":1.4000,"publicationDate":"2025-02-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0168583X25000126","RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"INSTRUMENTS & INSTRUMENTATION","Score":null,"Total":0}
引用次数: 0
Abstract
The traditional approach to evaluate the Displacement Damage Dose (DDD) effects in irradiated materials hinges on the concept of Non-Ionizing Energy Loss (NIEL). Historically, this method uses a single atomic displacement threshold energy (Ed) as a benchmark. But a single Ed just doesn’t cut it when it comes to accurately capturing the damage caused by electrons. To tackle this shortcoming, a more refined technique has been devised—one that introduces a spectrum of threshold energies into the NIEL calculations. Initially crafted for monatomic materials, this method has now been tailored for compound materials. Here, we propose updated NIEL values for certain III-V semiconductors and compare them with experimental damage factors, particularly emphasizing the effects of electron interactions.
期刊介绍：
Section B of Nuclear Instruments and Methods in Physics Research covers all aspects of the interaction of energetic beams with atoms, molecules and aggregate forms of matter. This includes ion beam analysis and ion beam modification of materials as well as basic data of importance for these studies. Topics of general interest include: atomic collisions in solids, particle channelling, all aspects of collision cascades, the modification of materials by energetic beams, ion implantation, irradiation - induced changes in materials, the physics and chemistry of beam interactions and the analysis of materials by all forms of energetic radiation. Modification by ion, laser and electron beams for the study of electronic materials, metals, ceramics, insulators, polymers and other important and new materials systems are included. Related studies, such as the application of ion beam analysis to biological, archaeological and geological samples as well as applications to solve problems in planetary science are also welcome. Energetic beams of interest include atomic and molecular ions, neutrons, positrons and muons, plasmas directed at surfaces, electron and photon beams, including laser treated surfaces and studies of solids by photon radiation from rotating anodes, synchrotrons, etc. In addition, the interaction between various forms of radiation and radiation-induced deposition processes are relevant.
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