{"title":"Transport evidence for the quantum Wigner solid formation in two-dimensional electron systems","authors":"A.A. Shashkin , M. Yu. Melnikov , S.V. Kravchenko","doi":"10.1016/j.physe.2025.116192","DOIUrl":null,"url":null,"abstract":"<div><div>In this Review, we report compelling transport evidence for the formation of a quantum Wigner solid in two-dimensional (2D) electron systems in silicon metal–oxide–semiconductor field-effect transistors (MOSFETs) and ultra-clean SiGe/Si/SiGe heterostructures. We have observed two-threshold voltage–current characteristics accompanied by a peak of broadband current noise between the two threshold voltages in both 2D systems. The double threshold behavior is very similar to that observed for the collective depinning of the vortex lattice in Type-II superconductors provided the voltage and current axes are interchanged. The observed results can be described by a phenomenological theory of the collective depinning of elastic structures, which naturally generates a peak of a broadband current noise between the dynamic and static thresholds and changes to sliding of the solid over a pinning barrier above the static threshold.</div></div>","PeriodicalId":20181,"journal":{"name":"Physica E-low-dimensional Systems & Nanostructures","volume":"168 ","pages":"Article 116192"},"PeriodicalIF":2.9000,"publicationDate":"2025-02-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Physica E-low-dimensional Systems & Nanostructures","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1386947725000177","RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"NANOSCIENCE & NANOTECHNOLOGY","Score":null,"Total":0}
引用次数: 0
Abstract
In this Review, we report compelling transport evidence for the formation of a quantum Wigner solid in two-dimensional (2D) electron systems in silicon metal–oxide–semiconductor field-effect transistors (MOSFETs) and ultra-clean SiGe/Si/SiGe heterostructures. We have observed two-threshold voltage–current characteristics accompanied by a peak of broadband current noise between the two threshold voltages in both 2D systems. The double threshold behavior is very similar to that observed for the collective depinning of the vortex lattice in Type-II superconductors provided the voltage and current axes are interchanged. The observed results can be described by a phenomenological theory of the collective depinning of elastic structures, which naturally generates a peak of a broadband current noise between the dynamic and static thresholds and changes to sliding of the solid over a pinning barrier above the static threshold.
期刊介绍：
Physica E: Low-dimensional systems and nanostructures contains papers and invited review articles on the fundamental and applied aspects of physics in low-dimensional electron systems, in semiconductor heterostructures, oxide interfaces, quantum wells and superlattices, quantum wires and dots, novel quantum states of matter such as topological insulators, and Weyl semimetals.
Both theoretical and experimental contributions are invited. Topics suitable for publication in this journal include spin related phenomena, optical and transport properties, many-body effects, integer and fractional quantum Hall effects, quantum spin Hall effect, single electron effects and devices, Majorana fermions, and other novel phenomena.
Keywords:
• topological insulators/superconductors, majorana fermions, Wyel semimetals;
• quantum and neuromorphic computing/quantum information physics and devices based on low dimensional systems;
• layered superconductivity, low dimensional systems with superconducting proximity effect;
• 2D materials such as transition metal dichalcogenides;
• oxide heterostructures including ZnO, SrTiO3 etc;
• carbon nanostructures (graphene, carbon nanotubes, diamond NV center, etc.)
• quantum wells and superlattices;
• quantum Hall effect, quantum spin Hall effect, quantum anomalous Hall effect;
• optical- and phonons-related phenomena;
• magnetic-semiconductor structures;
• charge/spin-, magnon-, skyrmion-, Cooper pair- and majorana fermion- transport and tunneling;
• ultra-fast nonlinear optical phenomena;
• novel devices and applications (such as high performance sensor, solar cell, etc);
• novel growth and fabrication techniques for nanostructures
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