Coprecipitation synthesis of Ni-doped SnO2 nanostructures and study of their structural, optical, and dielectric properties

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Materials Science: Materials in Electronics Pub Date : 2025-02-10 DOI:10.1007/s10854-025-14357-2
Zakir Ullah, Syed Zulfiqar, Shaukat Ali Khattak, Abeer M. Beagan, Gul Rooh, Tahirzeb Khan, Gulzar Khan
{"title":"Coprecipitation synthesis of Ni-doped SnO2 nanostructures and study of their structural, optical, and dielectric properties","authors":"Zakir Ullah,&nbsp;Syed Zulfiqar,&nbsp;Shaukat Ali Khattak,&nbsp;Abeer M. Beagan,&nbsp;Gul Rooh,&nbsp;Tahirzeb Khan,&nbsp;Gulzar Khan","doi":"10.1007/s10854-025-14357-2","DOIUrl":null,"url":null,"abstract":"<div><p>In this study, the dielectric and optical characteristics of low-dimensional pristine SnO<sub>2</sub> and SnO<sub>2</sub> doped with various nickel concentrations, grown through the coprecipitation method, are investigated. All the prepared samples demonstrate tetragonal phase according to the XRD results. The XRD pattern also shows that as the amount of the dopant increases, both the crystallite size and crystallinity decrease while the microstrain increases. The spherical morphological structure is made clear by SEM pictures. Consequently, elemental concentrations of tin, oxygen, and nickel in pristine samples and tin, oxygen, and nickel in all doped samples are shown by EDX. The EDX result indicates also that as the amount of nickel dopants increases, the oxygen concentration decreases and the SnO<sub>2</sub> sample becomes oxygen deficient. This results in more vacancies forming into the SnO<sub>2</sub> lattice. FTIR is used to study the vibrational modes of SnO<sub>2</sub>. The UV–Vis reveals that with increasing the Ni content, the absorbance rises, i.e., the samples doped with 5 wt.% Ni demonstrate the highest absorbance. There are higher oxygen vacancies (defect density) in the sample weighing 5 wt.%. The dielectric constant is found to be distributed due to the small size of the crystallites and the increased hopping mechanism between Ni<sup>2+</sup> and Ni<sup>3+</sup>. The best sample for storage devices is the one with 5-wt.% nickel, as indicated by the decrease in dielectric loss that occurs with an increase in nickel content. However, as the Ni content rises to 5 wt.%, Ni-doped SnO<sub>2</sub> exhibits an improvement in conductivity at higher frequencies, making it a suitable material for high-frequency devices.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 4","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2025-02-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-025-14357-2","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
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Abstract

In this study, the dielectric and optical characteristics of low-dimensional pristine SnO2 and SnO2 doped with various nickel concentrations, grown through the coprecipitation method, are investigated. All the prepared samples demonstrate tetragonal phase according to the XRD results. The XRD pattern also shows that as the amount of the dopant increases, both the crystallite size and crystallinity decrease while the microstrain increases. The spherical morphological structure is made clear by SEM pictures. Consequently, elemental concentrations of tin, oxygen, and nickel in pristine samples and tin, oxygen, and nickel in all doped samples are shown by EDX. The EDX result indicates also that as the amount of nickel dopants increases, the oxygen concentration decreases and the SnO2 sample becomes oxygen deficient. This results in more vacancies forming into the SnO2 lattice. FTIR is used to study the vibrational modes of SnO2. The UV–Vis reveals that with increasing the Ni content, the absorbance rises, i.e., the samples doped with 5 wt.% Ni demonstrate the highest absorbance. There are higher oxygen vacancies (defect density) in the sample weighing 5 wt.%. The dielectric constant is found to be distributed due to the small size of the crystallites and the increased hopping mechanism between Ni2+ and Ni3+. The best sample for storage devices is the one with 5-wt.% nickel, as indicated by the decrease in dielectric loss that occurs with an increase in nickel content. However, as the Ni content rises to 5 wt.%, Ni-doped SnO2 exhibits an improvement in conductivity at higher frequencies, making it a suitable material for high-frequency devices.

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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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