Spin–valley protected Kramers pair in bilayer graphene

IF 38.1 1区 材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY Nature nanotechnology Pub Date : 2025-02-10 DOI:10.1038/s41565-025-01858-8
Artem O. Denisov, Veronika Reckova, Solenn Cances, Max J. Ruckriegel, Michele Masseroni, Christoph Adam, Chuyao Tong, Jonas D. Gerber, Wei Wister Huang, Kenji Watanabe, Takashi Taniguchi, Thomas Ihn, Klaus Ensslin, Hadrien Duprez
{"title":"Spin–valley protected Kramers pair in bilayer graphene","authors":"Artem O. Denisov, Veronika Reckova, Solenn Cances, Max J. Ruckriegel, Michele Masseroni, Christoph Adam, Chuyao Tong, Jonas D. Gerber, Wei Wister Huang, Kenji Watanabe, Takashi Taniguchi, Thomas Ihn, Klaus Ensslin, Hadrien Duprez","doi":"10.1038/s41565-025-01858-8","DOIUrl":null,"url":null,"abstract":"<p>The intrinsic valley degree of freedom makes bilayer graphene (BLG) a unique platform for semiconductor qubits. The single-carrier quantum dot (QD) ground state exhibits a twofold degeneracy, where the two states that constitute a Kramers pair have opposite spin and valley quantum numbers. Because of the valley-dependent Berry curvature, an out-of-plane magnetic field breaks the time-reversal symmetry of this ground state and a qubit can be encoded in the spin–valley subspace. The Kramers states are protected against known spin- and valley-mixing mechanisms because mixing requires a simultaneous change of the two quantum numbers. Here, we fabricate a tunable QD device in Bernal BLG and measure a spin–valley relaxation time for the Kramers states of 38 s at 30 mK, which is two orders of magnitude longer than the 0.4 s measured for purely spin-blocked states. We also show that the intrinsic Kane–Mele spin–orbit splitting enables a Kramers doublet single-shot readout even at zero magnetic field with a fidelity above 99%. If these long-lived Kramers states also possess long coherence times and can be effectively manipulated, electrostatically defined QDs in BLG may serve as long-lived semiconductor qubits, extending beyond the spin qubit paradigm.</p>","PeriodicalId":18915,"journal":{"name":"Nature nanotechnology","volume":"64 1","pages":""},"PeriodicalIF":38.1000,"publicationDate":"2025-02-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Nature nanotechnology","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1038/s41565-025-01858-8","RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0

Abstract

The intrinsic valley degree of freedom makes bilayer graphene (BLG) a unique platform for semiconductor qubits. The single-carrier quantum dot (QD) ground state exhibits a twofold degeneracy, where the two states that constitute a Kramers pair have opposite spin and valley quantum numbers. Because of the valley-dependent Berry curvature, an out-of-plane magnetic field breaks the time-reversal symmetry of this ground state and a qubit can be encoded in the spin–valley subspace. The Kramers states are protected against known spin- and valley-mixing mechanisms because mixing requires a simultaneous change of the two quantum numbers. Here, we fabricate a tunable QD device in Bernal BLG and measure a spin–valley relaxation time for the Kramers states of 38 s at 30 mK, which is two orders of magnitude longer than the 0.4 s measured for purely spin-blocked states. We also show that the intrinsic Kane–Mele spin–orbit splitting enables a Kramers doublet single-shot readout even at zero magnetic field with a fidelity above 99%. If these long-lived Kramers states also possess long coherence times and can be effectively manipulated, electrostatically defined QDs in BLG may serve as long-lived semiconductor qubits, extending beyond the spin qubit paradigm.

Abstract Image

查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
求助全文
约1分钟内获得全文 去求助
来源期刊
Nature nanotechnology
Nature nanotechnology 工程技术-材料科学:综合
CiteScore
59.70
自引率
0.80%
发文量
196
审稿时长
4-8 weeks
期刊介绍: Nature Nanotechnology is a prestigious journal that publishes high-quality papers in various areas of nanoscience and nanotechnology. The journal focuses on the design, characterization, and production of structures, devices, and systems that manipulate and control materials at atomic, molecular, and macromolecular scales. It encompasses both bottom-up and top-down approaches, as well as their combinations. Furthermore, Nature Nanotechnology fosters the exchange of ideas among researchers from diverse disciplines such as chemistry, physics, material science, biomedical research, engineering, and more. It promotes collaboration at the forefront of this multidisciplinary field. The journal covers a wide range of topics, from fundamental research in physics, chemistry, and biology, including computational work and simulations, to the development of innovative devices and technologies for various industrial sectors such as information technology, medicine, manufacturing, high-performance materials, energy, and environmental technologies. It includes coverage of organic, inorganic, and hybrid materials.
期刊最新文献
Electron correlation strengthened in multilayer rhombohedral graphite Customizable virus-like particles deliver CRISPR–Cas9 ribonucleoprotein for effective ocular neovascular and Huntington’s disease gene therapy Nanopore discrimination of rare earth elements Spin–valley protected Kramers pair in bilayer graphene Multivalent effect enables efficient and stable deep-blue perovskite LEDs
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1