Non-equilibrium states and interactions in the topological insulator and topological crystalline insulator phases of NaCd4As3.

IF 2.3 2区 物理与天体物理 Q3 CHEMISTRY, PHYSICAL Structural Dynamics-Us Pub Date : 2025-02-05 eCollection Date: 2025-01-01 DOI:10.1063/4.0000273
Tika R Kafle, Yingchao Zhang, Yi-Yan Wang, Xun Shi, Na Li, Richa Sapkota, Jeremy Thurston, Wenjing You, Shunye Gao, Qingxin Dong, Kai Rossnagel, Gen-Fu Chen, James Freericks, Henry C Kapteyn, Margaret M Murnane
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Abstract

Topological materials are of great interest because they can support metallic edge or surface states that are robust against perturbations, with the potential for technological applications. Here, we experimentally explore the light-induced non-equilibrium properties of two distinct topological phases in NaCd4As3: a topological crystalline insulator (TCI) phase and a topological insulator (TI) phase. This material has surface states that are protected by mirror symmetry in the TCI phase at room temperature, while it undergoes a structural phase transition to a TI phase below 200 K. After exciting the TI phase by an ultrafast laser pulse, we observe a leading band edge shift of >150 meV that slowly builds up and reaches a maximum after ∼0.6 ps and that persists for ∼8 ps. The slow rise time of the excited electron population and electron temperature suggests that the electronic and structural orders are strongly coupled in this TI phase. It also suggests that the directly excited electronic states and the probed electronic states are weakly coupled. Both couplings are likely due to a partial relaxation of the lattice distortion, which is known to be associated with the TI phase. In contrast, no distinct excited state is observed in the TCI phase immediately or after photoexcitation, which we attribute to the low density of states and phase space available near the Fermi level. Our results show how ultrafast laser excitation can reveal the distinct excited states and interactions in phase-rich topological materials.

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NaCd4As3拓扑绝缘体和拓扑晶体绝缘体相的非平衡态及其相互作用。
拓扑材料非常有趣,因为它们可以支持金属边缘或表面状态,这些状态对扰动具有鲁棒性,具有技术应用的潜力。在这里,我们通过实验探索了NaCd4As3中两种不同拓扑相的光诱导非平衡性质:拓扑晶体绝缘体(TCI)相和拓扑绝缘体(TI)相。该材料在室温下具有镜面对称保护的TCI相表面态,而在200 K以下则经历了向TI相的结构相变。在用超快激光脉冲激发TI相后,我们观察到一个>150 meV的领先带边位移,它在~ 0.6 ps后缓慢积累并达到最大值,并持续到~ 8 ps。被激发电子居数和电子温度的缓慢上升时间表明,在这个TI相中电子和结构顺序是强耦合的。结果还表明,直接激发态和探测态是弱耦合的。这两种耦合都可能是由于晶格畸变的部分松弛,这是已知的与TI相有关。相比之下,在TCI相位中没有观察到明显的激发态,这是由于在费米能级附近可用的态密度和相空间很低。我们的研究结果表明,超快激光激发可以揭示富相拓扑材料中不同的激发态和相互作用。
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来源期刊
Structural Dynamics-Us
Structural Dynamics-Us CHEMISTRY, PHYSICALPHYSICS, ATOMIC, MOLECU-PHYSICS, ATOMIC, MOLECULAR & CHEMICAL
CiteScore
5.50
自引率
3.60%
发文量
24
审稿时长
16 weeks
期刊介绍: Structural Dynamics focuses on the recent developments in experimental and theoretical methods and techniques that allow a visualization of the electronic and geometric structural changes in real time of chemical, biological, and condensed-matter systems. The community of scientists and engineers working on structural dynamics in such diverse systems often use similar instrumentation and methods. The journal welcomes articles dealing with fundamental problems of electronic and structural dynamics that are tackled by new methods, such as: Time-resolved X-ray and electron diffraction and scattering, Coherent diffractive imaging, Time-resolved X-ray spectroscopies (absorption, emission, resonant inelastic scattering, etc.), Time-resolved electron energy loss spectroscopy (EELS) and electron microscopy, Time-resolved photoelectron spectroscopies (UPS, XPS, ARPES, etc.), Multidimensional spectroscopies in the infrared, the visible and the ultraviolet, Nonlinear spectroscopies in the VUV, the soft and the hard X-ray domains, Theory and computational methods and algorithms for the analysis and description of structuraldynamics and their associated experimental signals. These new methods are enabled by new instrumentation, such as: X-ray free electron lasers, which provide flux, coherence, and time resolution, New sources of ultrashort electron pulses, New sources of ultrashort vacuum ultraviolet (VUV) to hard X-ray pulses, such as high-harmonic generation (HHG) sources or plasma-based sources, New sources of ultrashort infrared and terahertz (THz) radiation, New detectors for X-rays and electrons, New sample handling and delivery schemes, New computational capabilities.
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