First-Principles Study on Introducing Fluorine Doping and Sulfur Vacancy into MoS2 for Advanced Lithium Storage

IF 3.2 4区 工程技术 Q1 MULTIDISCIPLINARY SCIENCES Advanced Theory and Simulations Pub Date : 2025-02-13 DOI:10.1002/adts.202401101
Zhiling Xu, Yanbing Liao, Kaihui Lin, Jiayi Guan, Yuda Lin, Liting Qiu
{"title":"First-Principles Study on Introducing Fluorine Doping and Sulfur Vacancy into MoS2 for Advanced Lithium Storage","authors":"Zhiling Xu,&nbsp;Yanbing Liao,&nbsp;Kaihui Lin,&nbsp;Jiayi Guan,&nbsp;Yuda Lin,&nbsp;Liting Qiu","doi":"10.1002/adts.202401101","DOIUrl":null,"url":null,"abstract":"<p>MoS<sub>2</sub>, a potential anode material for lithium ion batteries (LIBs), boasts high specific capacity, a unique layered structure, and large interlayer spacing, but struggles with poor conductivity and volume effect. Starting from improving the intrinsic electronic conductivity of MoS<sub>2</sub>, this study innovatively introduces F-doping and sulfur vacancies into MoS<sub>2</sub> crystals to form F-MoS<sub>2-x</sub> crystals, and investigates its structural features and LIBs applications through first-principle calculations. The rationality and stability of F-MoS<sub>2−x</sub> are calculated by phonon spectra. The density of states calculations reveals that F-doping and sulfur vacancies effectively alter MoS<sub>2</sub>'s electronic state, reducing its intrinsic band-gap and confirming F-MoS<sub>2-x</sub>'s superior electronic conductivity theoretically. They also significantly decrease lithium-ion diffusion resistance on F-MoS<sub>2-x</sub>'s surface, potentially enabling high-rate performance. Besides, the calculation of adsorption energy and differential charge density reveals strong adsorption between F-MoS<sub>2-x</sub> and lithium ions, which favors long-term cycle stability. Notably, with each F-MoS<sub>2-x</sub> molecule storing up to 4.5 Li, corresponding to a theoretical capacity of 769 mAh g<sup>−1</sup>, higher than MoS<sub>2</sub>'s 670 mAh g<sup>−1</sup>. This study provides a meaningful reference value for the modification of MoS<sub>2</sub>.</p>","PeriodicalId":7219,"journal":{"name":"Advanced Theory and Simulations","volume":"8 5","pages":""},"PeriodicalIF":3.2000,"publicationDate":"2025-02-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advanced Theory and Simulations","FirstCategoryId":"5","ListUrlMain":"https://advanced.onlinelibrary.wiley.com/doi/10.1002/adts.202401101","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"MULTIDISCIPLINARY SCIENCES","Score":null,"Total":0}
引用次数: 0

Abstract

MoS2, a potential anode material for lithium ion batteries (LIBs), boasts high specific capacity, a unique layered structure, and large interlayer spacing, but struggles with poor conductivity and volume effect. Starting from improving the intrinsic electronic conductivity of MoS2, this study innovatively introduces F-doping and sulfur vacancies into MoS2 crystals to form F-MoS2-x crystals, and investigates its structural features and LIBs applications through first-principle calculations. The rationality and stability of F-MoS2−x are calculated by phonon spectra. The density of states calculations reveals that F-doping and sulfur vacancies effectively alter MoS2's electronic state, reducing its intrinsic band-gap and confirming F-MoS2-x's superior electronic conductivity theoretically. They also significantly decrease lithium-ion diffusion resistance on F-MoS2-x's surface, potentially enabling high-rate performance. Besides, the calculation of adsorption energy and differential charge density reveals strong adsorption between F-MoS2-x and lithium ions, which favors long-term cycle stability. Notably, with each F-MoS2-x molecule storing up to 4.5 Li, corresponding to a theoretical capacity of 769 mAh g−1, higher than MoS2's 670 mAh g−1. This study provides a meaningful reference value for the modification of MoS2.

Abstract Image

查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
引入氟掺杂和硫空位的MoS2先进锂存储第一性原理研究
MoS2是锂离子电池极具潜力的负极材料,具有高比容量、独特的层状结构、层间间距大等优点,但电导率和体积效应较差。本研究从提高MoS2的本征电子导电性出发,创新性地在MoS2晶体中引入f掺杂和硫空位形成F-MoS2-x晶体,并通过第一性原理计算研究其结构特征和lib应用。利用声子谱计算了F-MoS2−x的合理性和稳定性。态密度计算表明,f掺杂和硫空位有效地改变了MoS2的电子态,减小了其固有带隙,从理论上证实了F-MoS2-x优越的电子导电性。它们还显著降低了F-MoS2-x表面的锂离子扩散阻力,潜在地实现了高速率性能。此外,吸附能和差电荷密度的计算表明,F-MoS2-x与锂离子之间具有较强的吸附作用,有利于长期循环稳定性。值得注意的是,每个F-MoS2-x分子存储高达4.5 Li,对应的理论容量为769 mAh g−1,高于MoS2的670 mAh g−1。本研究为MoS2的改性提供了有意义的参考价值。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
Advanced Theory and Simulations
Advanced Theory and Simulations Multidisciplinary-Multidisciplinary
CiteScore
5.50
自引率
3.00%
发文量
221
期刊介绍: Advanced Theory and Simulations is an interdisciplinary, international, English-language journal that publishes high-quality scientific results focusing on the development and application of theoretical methods, modeling and simulation approaches in all natural science and medicine areas, including: materials, chemistry, condensed matter physics engineering, energy life science, biology, medicine atmospheric/environmental science, climate science planetary science, astronomy, cosmology method development, numerical methods, statistics
期刊最新文献
Design and Optimization of Cs3Sb2I9/FASnI3 Lead-Free Perovskite Solar Cells: A Hybrid First-Principles and Machine Learning Approach Ab-Initio Simulations of Cubic Pyrite PtBi2 for Optoelectronic and Thermoelectric Applications Surface Engineering and Ligand Design for Perovskite Quantum Dot Stability: Computational Insights and Degradation Mechanisms Machine-Learning Hamiltonians for Predicting Formation Energies of Charged Defects From Small to Large Supercells Organometallic Lace in Carbon Nanobelts: Useful Motifs as Strain Buffers and Magnetic Anisotropic Sites From DFT Calculations
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1