{"title":"Performing of Spin‐Dependent Diodes in Co‐Doped SiC Bilayer by Fully Epitaxial Magnetic Tunnel Junctions","authors":"Xingkun Liang, Zhengxin Yan, Juntao Kong, Zehua Zhao, Jinghua Zhao, Yu Wang, Chen Qi, Zhaoqi Wang","doi":"10.1002/adts.202401455","DOIUrl":null,"url":null,"abstract":"The switching mechanisms of a spin current diode induced by an alternating electric field are investigated within fully epitaxial magnetic tunnel junctions (TJs) composed of a SiC double layer. This is achieved through precise engineering of the spatial positions of Co atoms, within which the spin‐diode tunneling process, driven by a bias voltage (BV), is carefully explored. This work reveals that incorporating high‐spin Co atoms into the SiC‐Co junction forms a spin‐down domain wall, thereby facilitating spin filtering. Meanwhile, the freedom of spin‐electron transmission governed by the TJ in a spin‐polarized heterojunction is confirmed. These findings demonstrate that the characteristics of the spin‐charge current can be significantly manipulated by adjusting the position of Co atoms in devices and by varying the applied BV, providing valuable insights for the development of spintronic devices.","PeriodicalId":7219,"journal":{"name":"Advanced Theory and Simulations","volume":"24 1","pages":""},"PeriodicalIF":2.9000,"publicationDate":"2025-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advanced Theory and Simulations","FirstCategoryId":"5","ListUrlMain":"https://doi.org/10.1002/adts.202401455","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"MULTIDISCIPLINARY SCIENCES","Score":null,"Total":0}
引用次数: 0
Abstract
The switching mechanisms of a spin current diode induced by an alternating electric field are investigated within fully epitaxial magnetic tunnel junctions (TJs) composed of a SiC double layer. This is achieved through precise engineering of the spatial positions of Co atoms, within which the spin‐diode tunneling process, driven by a bias voltage (BV), is carefully explored. This work reveals that incorporating high‐spin Co atoms into the SiC‐Co junction forms a spin‐down domain wall, thereby facilitating spin filtering. Meanwhile, the freedom of spin‐electron transmission governed by the TJ in a spin‐polarized heterojunction is confirmed. These findings demonstrate that the characteristics of the spin‐charge current can be significantly manipulated by adjusting the position of Co atoms in devices and by varying the applied BV, providing valuable insights for the development of spintronic devices.
期刊介绍:
Advanced Theory and Simulations is an interdisciplinary, international, English-language journal that publishes high-quality scientific results focusing on the development and application of theoretical methods, modeling and simulation approaches in all natural science and medicine areas, including:
materials, chemistry, condensed matter physics
engineering, energy
life science, biology, medicine
atmospheric/environmental science, climate science
planetary science, astronomy, cosmology
method development, numerical methods, statistics