Performing of Spin-Dependent Diodes in Co-Doped SiC Bilayer by Fully Epitaxial Magnetic Tunnel Junctions

Abstract

The switching mechanisms of a spin current diode induced by an alternating electric field are investigated within fully epitaxial magnetic tunnel junctions (TJs) composed of a SiC double layer. This is achieved through precise engineering of the spatial positions of Co atoms, within which the spin-diode tunneling process, driven by a bias voltage (BV), is carefully explored. This work reveals that incorporating high-spin Co atoms into the SiC-Co junction forms a spin-down domain wall, thereby facilitating spin filtering. Meanwhile, the freedom of spin-electron transmission governed by the TJ in a spin-polarized heterojunction is confirmed. These findings demonstrate that the characteristics of the spin-charge current can be significantly manipulated by adjusting the position of Co atoms in devices and by varying the applied BV, providing valuable insights for the development of spintronic devices.