The interplay between neutral and charged excitons driven by electron irradiation in monolayer WSe2

IF 4.6 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Materials Science in Semiconductor Processing Pub Date : 2025-02-13 DOI:10.1016/j.mssp.2025.109373
Filippo Fabbri, Sreyan Raha, Federica Bianco
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Abstract

Thanks to their strong excitonic effects and tunable bandgap, two-dimensional transition metal dichalcogenides (TMDs) are the key elements of many micro-optoelectronic, photonic, and next-generation logic devices. The performance optimization of current devices and the development of novel systems have recently boosted the engineering of the optical and electronic properties of the TMDs to externally control the dynamics of their excitons, including exciton formation, interaction, and relaxation. Among the various regulation strategies, electron-irradiation is a facile and deterministic process. Here, we employ this method to regulate the interplay among neutral and charged excitons in monolayer WSe2 by varying the electron dose. Specifically, we demonstrate that the interaction of 20 keV electrons with the lattice of WSe2 crystals and the subsequent exposure to ambient air causes the tuning of the charge doping and the formation of a compressive strain field. Their simultaneous actions result in a conversion of neutral excitons into charged ones, while their single contribution is qualitatively disentangled by correlating the binding energy with the excitons intensities. These findings significantly advance our understanding of the WSe2 optical emission properties engineered by electron-irradiation, shedding light on the intricate interplay between the excitons.

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电子辐照下单层WSe2中中性激子与带电激子的相互作用
由于其强大的激子效应和可调的带隙,二维过渡金属二硫族化合物(TMDs)是许多微光电、光子和下一代逻辑器件的关键元件。当前器件的性能优化和新系统的开发最近推动了tmd光学和电子特性的工程,以外部控制其激子的动力学,包括激子的形成、相互作用和弛豫。在各种调控策略中,电子辐照是一种简单而确定的过程。在这里,我们采用这种方法通过改变电子剂量来调节单层WSe2中中性和带电激子之间的相互作用。具体来说,我们证明了20个keV电子与WSe2晶体晶格的相互作用以及随后暴露于环境空气中导致电荷掺杂的调谐和压缩应变场的形成。它们的同时作用导致中性激子转化为带电激子,而它们的单一贡献通过将结合能与激子强度相关联而定性地解开。这些发现极大地促进了我们对电子辐照设计的WSe2光学发射特性的理解,揭示了激子之间复杂的相互作用。
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来源期刊
Materials Science in Semiconductor Processing
Materials Science in Semiconductor Processing 工程技术-材料科学:综合
CiteScore
8.00
自引率
4.90%
发文量
780
审稿时长
42 days
期刊介绍: Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.
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