The interplay between neutral and charged excitons driven by electron irradiation in monolayer WSe2

IF 4.2 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Materials Science in Semiconductor Processing Pub Date : 2025-02-13 DOI:10.1016/j.mssp.2025.109373
Filippo Fabbri, Sreyan Raha, Federica Bianco
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Abstract

Thanks to their strong excitonic effects and tunable bandgap, two-dimensional transition metal dichalcogenides (TMDs) are the key elements of many micro-optoelectronic, photonic, and next-generation logic devices. The performance optimization of current devices and the development of novel systems have recently boosted the engineering of the optical and electronic properties of the TMDs to externally control the dynamics of their excitons, including exciton formation, interaction, and relaxation. Among the various regulation strategies, electron-irradiation is a facile and deterministic process. Here, we employ this method to regulate the interplay among neutral and charged excitons in monolayer WSe2 by varying the electron dose. Specifically, we demonstrate that the interaction of 20 keV electrons with the lattice of WSe2 crystals and the subsequent exposure to ambient air causes the tuning of the charge doping and the formation of a compressive strain field. Their simultaneous actions result in a conversion of neutral excitons into charged ones, while their single contribution is qualitatively disentangled by correlating the binding energy with the excitons intensities. These findings significantly advance our understanding of the WSe2 optical emission properties engineered by electron-irradiation, shedding light on the intricate interplay between the excitons.

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来源期刊
Materials Science in Semiconductor Processing
Materials Science in Semiconductor Processing 工程技术-材料科学:综合
CiteScore
8.00
自引率
4.90%
发文量
780
审稿时长
42 days
期刊介绍: Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.
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