Robustness of the Au/Ni ohmic contact on p-type GaN through microelectronic manufacturing processes

IF 4.6 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Materials Science in Semiconductor Processing Pub Date : 2025-06-15 Epub Date: 2025-03-05 DOI:10.1016/j.mssp.2025.109429

Quentin Paoli , Frédéric Cayrel , Zihao Lyu , Laurent Barreau , Daniel Alquier

引用次数: 0

Abstract

GaN is an interesting material for power application but requires increasing process reliability. In this work, Au/Ni ohmic contacts on p-type GaN are studied over a complete process flow representative of a real die fabrication. The impact of passivation and refill layers on the contact quality are investigated. First results reveal that Si based passivation degrades the ohmic behavior whereas Parylene passivation allows to keep the contact integrity. The addition of Al refill layer has only a slight impact on the best I-V characteristics. After a complete stack process, composed of two passivation and two refill layers, only fully Parylene passivated samples lead to an ohmic contact with a quasi-linear I-V response and a corresponding average SCR value of 0.96–2.79 x 10-3 Ω cm².

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微电子制造工艺对p型GaN上Au/Ni欧姆接触的鲁棒性研究

氮化镓是一种有趣的电源应用材料，但需要提高工艺可靠性。在这项工作中，在一个完整的工艺流程中研究了p型GaN上的Au/Ni欧姆接触，代表了一个真正的模具制造。研究了钝化层和填充层对接触质量的影响。第一个结果表明，硅基钝化降低了欧姆行为，而聚对二甲苯钝化可以保持接触的完整性。Al填充层的添加对最佳I-V特性的影响很小。在由两个钝化层和两个填充层组成的完整堆叠过程中，只有完全聚对二甲苯钝化的样品才能产生具有准线性I-V响应的欧姆接触，相应的平均SCR值为0.96-2.79 x 10-3 Ω cm2。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Materials Science in Semiconductor Processing 工程技术-材料科学：综合

CiteScore

8.00

自引率

4.90%

发文量

780

审稿时长

42 days

期刊介绍： Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.