Marta Gładysiewicz-Kudrawiec, Mikołaj Żak, Witold Trzeciakowski
{"title":"Oscillations in Absorption from InGaN/GaN Quantum Well to Continuum.","authors":"Marta Gładysiewicz-Kudrawiec, Mikołaj Żak, Witold Trzeciakowski","doi":"10.3390/nano15030174","DOIUrl":null,"url":null,"abstract":"<p><p>We analyze theoretically an InGaN/GaN <i>n-i-p</i> diode with a single quantum well supporting only one bound state. The bottom parts of the diode, namely the first barrier and the quantum well, are heavily n-doped with silicon at 5 × 10<sup>19</sup> cm<sup>-3</sup> to ensure a high electron concentration in the well. The voltage drop in the diode occurs in the second AlGaN barrier, which is undoped, and structure ends with a p-doped GaN. The band structure of the diode is calculated by a Schrodinger-Poisson drift-diffusion solver. Next, we calculate the absorption from the bound state in the well to the \"continuum\" above the well. We show the oscillatory behavior of the spectrum, with the amplitude decreasing with more negative voltage applied to the diode. Oscillations are due to interferences of the wavefunctions between the edges of the well and the slope of the potential barrier.</p>","PeriodicalId":18966,"journal":{"name":"Nanomaterials","volume":"15 3","pages":""},"PeriodicalIF":4.4000,"publicationDate":"2025-01-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC11820425/pdf/","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Nanomaterials","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.3390/nano15030174","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"CHEMISTRY, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
We analyze theoretically an InGaN/GaN n-i-p diode with a single quantum well supporting only one bound state. The bottom parts of the diode, namely the first barrier and the quantum well, are heavily n-doped with silicon at 5 × 1019 cm-3 to ensure a high electron concentration in the well. The voltage drop in the diode occurs in the second AlGaN barrier, which is undoped, and structure ends with a p-doped GaN. The band structure of the diode is calculated by a Schrodinger-Poisson drift-diffusion solver. Next, we calculate the absorption from the bound state in the well to the "continuum" above the well. We show the oscillatory behavior of the spectrum, with the amplitude decreasing with more negative voltage applied to the diode. Oscillations are due to interferences of the wavefunctions between the edges of the well and the slope of the potential barrier.
期刊介绍：
Nanomaterials (ISSN 2076-4991) is an international and interdisciplinary scholarly open access journal. It publishes reviews, regular research papers, communications, and short notes that are relevant to any field of study that involves nanomaterials, with respect to their science and application. Thus, theoretical and experimental articles will be accepted, along with articles that deal with the synthesis and use of nanomaterials. Articles that synthesize information from multiple fields, and which place discoveries within a broader context, will be preferred. There is no restriction on the length of the papers. Our aim is to encourage scientists to publish their experimental and theoretical research in as much detail as possible. Full experimental or methodical details, or both, must be provided for research articles. Computed data or files regarding the full details of the experimental procedure, if unable to be published in a normal way, can be deposited as supplementary material. Nanomaterials is dedicated to a high scientific standard. All manuscripts undergo a rigorous reviewing process and decisions are based on the recommendations of independent reviewers.
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