Capacitance Effects of Nanopore Chips on Ionic Current Modulation and Noise Characteristics.

IF 2.9 4区 材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY Nanotechnology Pub Date : 2025-02-17 DOI:10.1088/1361-6528/adb6a5
Kabin Lin, Chen Chen, Dongxuan Li, Haoyong Li, Jinzhu Zhou
{"title":"Capacitance Effects of Nanopore Chips on Ionic Current Modulation and Noise Characteristics.","authors":"Kabin Lin, Chen Chen, Dongxuan Li, Haoyong Li, Jinzhu Zhou","doi":"10.1088/1361-6528/adb6a5","DOIUrl":null,"url":null,"abstract":"<p><p>Solid-state nanopores exhibit adjustable pore size, robust chemical and thermal stability, and compatibility with semiconductor fabrication, positioning them as versatile platforms for nanofluidic applications and single-molecule detection. However, their higher noise levels compared to biological nanopores hinder their sensitivity in detecting biomolecules such as DNA and proteins. Enhancing detection sensitivity requires an in-depth understanding of noise sources and strategies for noise reduction. Here, we construct an equivalent circuit model of solid-state nanopores and conduct corresponding experiments to evaluate how chip capacitance, salt concentration, applied voltage, and pore size influence ionic current noise. We find that chip capacitance is the dominant factor affecting ionic current noise, with minimal noise sensitivity to salt concentration below 0.1 M but pronounced increases above this threshold. The pH has little impact on noise, whereas higher applied voltages elevate noise at high salt concentrations. Introducing a SiO<sub>2</sub>layer between SiN<sub>x</sub>and Si significantly reduces chip capacitance; a 1000 nm SiO<sub>2</sub>layer reduces capacitance to 7.9 pF, decreasing ionic current noise to 18.7 pA for a 2.2 nm nanopore in 1 M KCl at 40 μm membrane side length and 100 mV and 10 kHz sampling. This reduction in capacitance improves response time and measurement accuracy, marking a critical advancement for high-sensitivity applications of solid-state nanopores.</p>","PeriodicalId":19035,"journal":{"name":"Nanotechnology","volume":" ","pages":""},"PeriodicalIF":2.9000,"publicationDate":"2025-02-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Nanotechnology","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1088/1361-6528/adb6a5","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0

Abstract

Solid-state nanopores exhibit adjustable pore size, robust chemical and thermal stability, and compatibility with semiconductor fabrication, positioning them as versatile platforms for nanofluidic applications and single-molecule detection. However, their higher noise levels compared to biological nanopores hinder their sensitivity in detecting biomolecules such as DNA and proteins. Enhancing detection sensitivity requires an in-depth understanding of noise sources and strategies for noise reduction. Here, we construct an equivalent circuit model of solid-state nanopores and conduct corresponding experiments to evaluate how chip capacitance, salt concentration, applied voltage, and pore size influence ionic current noise. We find that chip capacitance is the dominant factor affecting ionic current noise, with minimal noise sensitivity to salt concentration below 0.1 M but pronounced increases above this threshold. The pH has little impact on noise, whereas higher applied voltages elevate noise at high salt concentrations. Introducing a SiO2layer between SiNxand Si significantly reduces chip capacitance; a 1000 nm SiO2layer reduces capacitance to 7.9 pF, decreasing ionic current noise to 18.7 pA for a 2.2 nm nanopore in 1 M KCl at 40 μm membrane side length and 100 mV and 10 kHz sampling. This reduction in capacitance improves response time and measurement accuracy, marking a critical advancement for high-sensitivity applications of solid-state nanopores.

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来源期刊
Nanotechnology
Nanotechnology 工程技术-材料科学:综合
CiteScore
7.10
自引率
5.70%
发文量
820
审稿时长
2.5 months
期刊介绍: The journal aims to publish papers at the forefront of nanoscale science and technology and especially those of an interdisciplinary nature. Here, nanotechnology is taken to include the ability to individually address, control, and modify structures, materials and devices with nanometre precision, and the synthesis of such structures into systems of micro- and macroscopic dimensions such as MEMS based devices. It encompasses the understanding of the fundamental physics, chemistry, biology and technology of nanometre-scale objects and how such objects can be used in the areas of computation, sensors, nanostructured materials and nano-biotechnology.
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