A comprehensive study on morphological, structural, optical, dielectric, and piezoelectric properties of polyvinyl alcohol/tantalum carbide—silicon dioxide nanocomposites for flexible energy storage devices

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Materials Science: Materials in Electronics Pub Date : 2025-02-19 DOI:10.1007/s10854-025-14431-9
Majeed Ali Habeeb, Shaimaa Mazhar Mahdi
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Abstract

The development of advanced materials with enhanced optical and electrical properties is critical for applications in photonic and electronic devices. This work's objective is to produce nanocomposites by casting and molding a polymeric mixture from polyvinyl alcohol (PVA) with two nanomaterial tantalum carbide (TaC) and silicon dioxide (SiO2) nanoparticles with varying weight percentages (0, 1, 3, 5) wt%. The morphological, structural, optical, and electrical characteristics of PVA/TaC-SiO2 nanocomposites were studied. When compared to pure polyvinyl alcohol (PVA), the samples show a change in peak location, shape, and intensity, as shown by FTIR analysis. Images taken using an optical microscope indicate that the nanoparticle dispersion of the mixture showed a uniform pattern, creating a cohesive network across the polymer matrix. At room temperature, the dielectric properties of the nanocomposites were investigated within the frequency range of 102–106 Hz. The experiment results indicate that the dielectric constant and dielectric loss decreased by increasing the frequency of the applied electric field, while electrical conductivity of alternating current (A.C) rose with rising frequency. The dielectric constant, dielectric loss, and A.C. electrical conductivity of pure PVA were shown to be positively correlated with the concentration of nanoparticles. The dielectric loss reached 2.3 at 5% at 100 Hz while dielectric constant reach to 58. The UV absorption of PVA/ TaC-SiO2 nanocomposites is high. The results of the optical properties of nanocomposites PVA/ TaC-SiO2 showed that as greater the number of nanoparticles (TaC-SiO2), absorbance, absorption coefficient, extinction coefficient, refractive index, actual and imaginary dielectric constants, and optical conductivity were increases. The energy gap for allowed transitions fell from 4.25 to 1.9 eV, while the energy gap for forbidden transitions reduced from 3.99 to 1.2 eV, as the concentration of TaC-SiO2 nanoparticles increases the transmittance decreases. The results show that PVA/TaC-SiO2 NC films have outstanding optical and electrical properties, which may improve their use in a variety of electrical and photonic applications. The findings of the pressure sensor demonstrate that the PVA/TaC-SiO2 nanostructures have superior environmental durability, remarkable flexibility, and excellent pressure sensitivity when compared to other sensors.

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用于柔性储能器件的聚乙烯醇/碳化钽-二氧化硅纳米复合材料的形态、结构、光学、介电和压电性能综合研究
开发具有增强光学和电学性能的先进材料对于光子和电子器件的应用至关重要。这项工作的目标是通过铸造和成型聚乙烯醇(PVA)与两种纳米碳化钽(TaC)和二氧化硅(SiO2)纳米颗粒的聚合物混合物,以不同的重量百分比(0,1,3,5)wt%来生产纳米复合材料。研究了PVA/TaC-SiO2纳米复合材料的形貌、结构、光学和电学特性。与纯聚乙烯醇(PVA)相比,样品在峰的位置、形状和强度上都发生了变化,这一点可以通过FTIR分析得到。使用光学显微镜拍摄的图像表明,混合物的纳米颗粒分散呈现出均匀的模式,在聚合物基体上形成了一个有凝聚力的网络。在室温下,研究了纳米复合材料在102 ~ 106 Hz频率范围内的介电性能。实验结果表明,随着外加电场频率的增加,材料的介电常数和介电损耗减小,交流电的电导率随外加电场频率的升高而升高。纯聚乙烯醇的介电常数、介电损耗和交流电导率与纳米粒子浓度呈正相关。在100 Hz下,5%的介电损耗达到2.3,介电常数达到58。PVA/ TaC-SiO2纳米复合材料具有较高的紫外吸收率。PVA/ TaC-SiO2纳米复合材料的光学性能研究结果表明,随着TaC-SiO2纳米粒子数量的增加,其吸光度、吸收系数、消光系数、折射率、实际介电常数和虚介电常数以及光学电导率均增大。允许跃迁的能隙从4.25 eV减小到1.9 eV,禁止跃迁的能隙从3.99 eV减小到1.2 eV,随着TaC-SiO2纳米颗粒浓度的增加,透过率减小。结果表明,PVA/TaC-SiO2 NC薄膜具有优异的光学和电学性能,这可能会提高其在各种电学和光子领域的应用。该压力传感器的研究结果表明,与其他传感器相比,PVA/TaC-SiO2纳米结构具有优越的环境耐久性,卓越的灵活性和优异的压力灵敏度。
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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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