Mechanistic understanding of self-limiting oxidation behavior of copper nanowires with dense twin boundaries

IF 6.9 2区 材料科学 Q2 CHEMISTRY, PHYSICAL Applied Surface Science Pub Date : 2025-05-30 Epub Date: 2025-02-21 DOI:10.1016/j.apsusc.2025.162753
Hsin-Yu Chen , Hsin-Yi Tiffany Chen , Chien-Neng Liao
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Abstract

Metal oxidation has long been an interesting and important research topic because it strongly impacts the electrical and mechanical properties of metals. Copper typically lacks the self-limiting oxidation characteristics observed in aluminum, chromium, and titanium. Nevertheless, Cu nanowires with dense coherent twin boundaries (CTBs) exhibit superior stability against further oxidation by forming a conformal thin surface oxide layer. This study reports an experimental and theoretical investigation of the unusual self-limiting oxidation behavior of nanotwinned Cu (nt-Cu) nanowires. The results indicate that CTB-intersected surface junctions decrease atomic step density and minimize oxide nuclei populations on nt-Cu surfaces. A two-dimensional oxide growth is suggested due to the reduced activity of Cu adatoms detaching from the concave CTB-intersected junctions. Consequently, the underlying nt-Cu nanowire is protected from further oxidation by a thin and conformal oxide layer.

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致密孪晶界铜纳米线自限氧化行为的机理研究
金属氧化一直是一个有趣而重要的研究课题,因为它强烈地影响金属的电学和力学性能。铜通常缺乏在铝、铬和钛中观察到的自限制氧化特性。然而,具有致密相干孪晶界(CTBs)的Cu纳米线通过形成保形的薄表面氧化层,表现出优异的抗进一步氧化的稳定性。本研究报道了纳米孪晶Cu (nt-Cu)纳米线不寻常的自限氧化行为的实验和理论研究。结果表明,ctb相交的表面结降低了原子步长密度,并使nt-Cu表面的氧化核居群最小化。由于Cu吸附原子从ctb相交的凹结上脱落,活性降低,因此提出了二维氧化生长。因此,下面的nt-Cu纳米线被保护免受进一步氧化的薄和保形氧化层。
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来源期刊
Applied Surface Science
Applied Surface Science 工程技术-材料科学:膜
CiteScore
12.50
自引率
7.50%
发文量
3393
审稿时长
67 days
期刊介绍: Applied Surface Science covers topics contributing to a better understanding of surfaces, interfaces, nanostructures and their applications. The journal is concerned with scientific research on the atomic and molecular level of material properties determined with specific surface analytical techniques and/or computational methods, as well as the processing of such structures.
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