Enriched upconversion emission and electrical properties of Er3+/Yb3+/Mn: ZnWO4 phosphors for display and anti-counterfeit applications

IF 5.2 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Materials Science in Semiconductor Processing Pub Date : 2025-06-15 Epub Date: 2025-02-24 DOI:10.1016/j.mssp.2025.109404
Swagata Chakraborty , Joydip Dutta , Mitesh Chakraborty
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Abstract

The upconverting codoped/tridoped ZnWO4: Er3+/Yb3+/Mn materials have been synthesized for structural, electrical and optical studies. The X-ray diffraction (XRD) investigation confirms the highly crystalline monoclinic phase of the prepared material. The elemental mapping indicates complete incorporation of the raw ingredients in the host. Charge transfer band (CTB) is observed between the Mn4+ and O2− ions in the interval 239–282 nm of the Diffuse Reflectance Spectra (DRS). Some characteristic absorption bands of Mn3+ ion due to 5E/5E// transition is also observed in the region 806–908 nm of the DRS spectra. We have also reported the Raman and Fourier transform of Infra-red (FTIR) vibrations of the optimized sample in the present investigation. The temperature dependant EPR spectra infers cation vacancies in the host matrix. The XPS study confirms the mixed state of Mn4+ and Mn3+ ion in the host material. The CIE spectra and photometric calculations shows that these high colour purity phosphors may be explored to design cool LEDs. The investigation of electrical parameters advocates display applications in the temperature region 30 °C to 100 °C of the prepared material. The anti-counterfeit application is also demonstrated in the present study.
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用于显示和防伪应用的Er3+/Yb3+/Mn: ZnWO4荧光粉的上转换发射和电学性能增强
合成了上转换共掺杂/三掺杂ZnWO4: Er3+/Yb3+/Mn材料,用于结构、电学和光学研究。x射线衍射(XRD)研究证实了所制备材料的高结晶单斜相。元素映射表明原始成分完全融入宿主体内。在漫反射光谱(DRS)的239 ~ 282 nm范围内,Mn4+和O2−离子之间存在电荷转移带(CTB)。在DRS光谱的806 ~ 908 nm区域也观察到Mn3+离子由于5E/→5E//跃迁而产生的特征吸收带。我们还报道了优化样品的红外(FTIR)振动的拉曼和傅里叶变换。温度相关的EPR光谱推断出基质中的阳离子空位。XPS研究证实了Mn4+和Mn3+离子在主体材料中的混合状态。CIE光谱和光度计算表明,这些高色纯度荧光粉可以用于设计冷led。电气参数的研究主张在制备材料的30°C至100°C的温度范围内显示应用。本文还论证了该技术在防伪方面的应用。
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来源期刊
Materials Science in Semiconductor Processing
Materials Science in Semiconductor Processing 工程技术-材料科学:综合
CiteScore
8.00
自引率
4.90%
发文量
780
审稿时长
42 days
期刊介绍: Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.
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