Junction less tunnel field-effect transistors (JLTFET): A transformation from design to diagnosis

IF 4.2 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Materials Science in Semiconductor Processing Pub Date : 2025-02-25 DOI:10.1016/j.mssp.2025.109402
Pavithra S , Ashis Tripathy , Girija Shankar Sahoo , Dusan Losic
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引用次数: 0

Abstract

Junction-less tunnel field-effect transistors (JLTFET) have emerged as promising candidates for biosensing applications due to their unique characteristic features including compatibility with CMOS technology, high sensitivity, label-free detection, real-time monitoring, low biomolecule concentration detection capabilities and low power consumption. Numerous studies indicate that JLTFET based biosensors requires well-modified immobilization techniques and optimization of surface functionalization processes to enhance the sensor's selectivity and multiplexed detection to generate significant biological signals with minimal non-specific binding. Nevertheless, there is still a significant gap in research to solve the technical issues related to appropriate design structure, fabrication techniques, functionalization, sensitivity with respect to targeted intercellular biological tiny particles, and lower signal-to-noise ratio of JLTFET biosensor. This advancement will allow finding exceptional characteristics of JLTFET biosensor to design an appropriate sensing device for the intracellular measurements and diseases detection. This review presents recent progress in healthcare applications of JLTFET biosensor with focus on widely used fabrication techniques, components, characteristics, effect of structural change on sensitivity, their benefits and limitations. The paper also discusses the impact of AI, current progress, key factors for sensitivity, selectivity and efficiency improvement as well as the challenges, upcoming trends and other perspectives of JLTFET based biosensors.
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来源期刊
Materials Science in Semiconductor Processing
Materials Science in Semiconductor Processing 工程技术-材料科学:综合
CiteScore
8.00
自引率
4.90%
发文量
780
审稿时长
42 days
期刊介绍: Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.
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