Junction less tunnel field-effect transistors (JLTFET): A transformation from design to diagnosis

IF 4.6 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Materials Science in Semiconductor Processing Pub Date : 2025-02-25 DOI:10.1016/j.mssp.2025.109402
Pavithra S , Ashis Tripathy , Girija Shankar Sahoo , Dusan Losic
{"title":"Junction less tunnel field-effect transistors (JLTFET): A transformation from design to diagnosis","authors":"Pavithra S ,&nbsp;Ashis Tripathy ,&nbsp;Girija Shankar Sahoo ,&nbsp;Dusan Losic","doi":"10.1016/j.mssp.2025.109402","DOIUrl":null,"url":null,"abstract":"<div><div>Junction-less tunnel field-effect transistors (JLTFET) have emerged as promising candidates for biosensing applications due to their unique characteristic features including compatibility with CMOS technology, high sensitivity, label-free detection, real-time monitoring, low biomolecule concentration detection capabilities and low power consumption. Numerous studies indicate that JLTFET based biosensors requires well-modified immobilization techniques and optimization of surface functionalization processes to enhance the sensor's selectivity and multiplexed detection to generate significant biological signals with minimal non-specific binding. Nevertheless, there is still a significant gap in research to solve the technical issues related to appropriate design structure, fabrication techniques, functionalization, sensitivity with respect to targeted intercellular biological tiny particles, and lower signal-to-noise ratio of JLTFET biosensor. This advancement will allow finding exceptional characteristics of JLTFET biosensor to design an appropriate sensing device for the intracellular measurements and diseases detection. This review presents recent progress in healthcare applications of JLTFET biosensor with focus on widely used fabrication techniques, components, characteristics, effect of structural change on sensitivity, their benefits and limitations. The paper also discusses the impact of AI, current progress, key factors for sensitivity, selectivity and efficiency improvement as well as the challenges, upcoming trends and other perspectives of JLTFET based biosensors.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"192 ","pages":"Article 109402"},"PeriodicalIF":4.6000,"publicationDate":"2025-02-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Science in Semiconductor Processing","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1369800125001398","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
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Abstract

Junction-less tunnel field-effect transistors (JLTFET) have emerged as promising candidates for biosensing applications due to their unique characteristic features including compatibility with CMOS technology, high sensitivity, label-free detection, real-time monitoring, low biomolecule concentration detection capabilities and low power consumption. Numerous studies indicate that JLTFET based biosensors requires well-modified immobilization techniques and optimization of surface functionalization processes to enhance the sensor's selectivity and multiplexed detection to generate significant biological signals with minimal non-specific binding. Nevertheless, there is still a significant gap in research to solve the technical issues related to appropriate design structure, fabrication techniques, functionalization, sensitivity with respect to targeted intercellular biological tiny particles, and lower signal-to-noise ratio of JLTFET biosensor. This advancement will allow finding exceptional characteristics of JLTFET biosensor to design an appropriate sensing device for the intracellular measurements and diseases detection. This review presents recent progress in healthcare applications of JLTFET biosensor with focus on widely used fabrication techniques, components, characteristics, effect of structural change on sensitivity, their benefits and limitations. The paper also discusses the impact of AI, current progress, key factors for sensitivity, selectivity and efficiency improvement as well as the challenges, upcoming trends and other perspectives of JLTFET based biosensors.
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无结隧道场效应晶体管(JLTFET):从设计到诊断的转变
无结隧道场效应晶体管(JLTFET)由于其独特的特性,包括与CMOS技术的兼容性、高灵敏度、无标签检测、实时监测、低生物分子浓度检测能力和低功耗,已成为生物传感应用的有希望的候选者。大量研究表明,基于JLTFET的生物传感器需要完善的固定技术和优化的表面功能化过程,以提高传感器的选择性和多路检测,以最小的非特异性结合产生重要的生物信号。然而,JLTFET生物传感器的合理设计结构、制作工艺、功能化、对细胞间生物微粒的靶向灵敏度、低信噪比等技术问题的解决仍存在较大的研究空白。这一进展将有助于发现JLTFET生物传感器的特殊特性,为细胞内测量和疾病检测设计合适的传感装置。本文综述了近年来JLTFET生物传感器在医疗保健领域的应用进展,重点介绍了JLTFET生物传感器的制备技术、组成、特性、结构变化对灵敏度的影响以及它们的优点和局限性。本文还讨论了人工智能的影响、目前的进展、提高灵敏度、选择性和效率的关键因素以及基于JLTFET的生物传感器面临的挑战、未来的趋势和其他观点。
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来源期刊
Materials Science in Semiconductor Processing
Materials Science in Semiconductor Processing 工程技术-材料科学:综合
CiteScore
8.00
自引率
4.90%
发文量
780
审稿时长
42 days
期刊介绍: Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.
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