Optimizing interface microstructure of diamond reinforced Al matrix composites via nano-scale Si-Al coatings towards enhanced thermophysical performance
Jianjie Wu, Gang Yuan, Zengkai Jiao, Yuanzhuo Yao, Wenjie Huang, Kechao Zhou, Li Ma, Qiuping Wei
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引用次数: 0
Abstract
Diamond reinforced Al matrix (Diamond/Al) composites have garnered significant attention owing to their excellent heat dissipation and low density. However, preventing the interfacial Al4C3 while optimizing interface thermal conductance and thermal expansion mismatch remains a challenge. Herein, nano-scale Si-Al coatings were introduced on the diamond surface via a low-temperature synthesis strategy, which developed a multilayer structure comprising SiC, Al4SiC4, and Si when annealed at 900 °C. The phase transition of SiC from 3C– to 4H-type is crucial for forming Al4SiC4. During the infiltration, the crystalline Si within the coatings effectively inhibits the interaction between molten Al and elemental C. First-principles calculations confirmed superior interfacial bonding and phonon matching with the introduction of SiC and Al4SiC4. By regulating the coating thickness, an excellent thermal conductivity (TC) of 723.18 W∙m−1∙K−1 and a suitable coefficient of thermal expansion of 5.96 × 10−6 K−1 at 373 K are achieved. The 50 nm Si-Al coated diamond/Al composites exhibit remarkable service stability, with a 6.1 % reduction in TC after 200 cycles of temperature shock tests, and a 0.2 % decrease after 200 h of soaking water treatments. These findings highlight the Si-Al coatings to address interfacial challenges in diamond/Al composites, laying the groundwork for their practical application.
期刊介绍:
Applied Surface Science covers topics contributing to a better understanding of surfaces, interfaces, nanostructures and their applications. The journal is concerned with scientific research on the atomic and molecular level of material properties determined with specific surface analytical techniques and/or computational methods, as well as the processing of such structures.