{"title":"Solution-processed 3D/3D bilayer perovskite heterojunction solar cells","authors":"Hongyu Li, Xu Chen, Haijin Li, Huiyao Zhao, Jiashun Li, Tianhe Dong, Wenfeng Zhang","doi":"10.1016/j.mssp.2025.109431","DOIUrl":null,"url":null,"abstract":"<div><div>Perovskite materials have garnered significant attention in both research and industry due to their excellent light absorption and unique optoelectronic properties. However, in perovskite solar cells (PSCs), severe non-radiative recombination at the interface between the carrier transport layer and the perovskite leads to performance losses, significantly hindering efficiency improvements. While the 2D/3D heterostructure can mitigate interfacial recombination losses, its asymmetric conductivity and potential uneven distribution may impair charge transfer and increase the series resistance of PSCs. To address the conflict between surface passivation and the conductivity of the passivated layer, we designed a novel heterojunction by substituting the 2D intermediate layer with a more conductive 3D perovskite. In this study, we introduce a bilayer FAPbI<sub>3</sub>/MAPbI<sub>3</sub> perovskite prepared via solution processing. A 3D/3D double-layer perovskite structure was formed by depositing MAPbI<sub>3</sub> onto the FAPbI<sub>3</sub> substrate using a two-step dynamic spin-coating technique. UPS analysis confirmed this as a Type II 3D/3D perovskite heterojunction. By leveraging the energy band differences and transfer mechanisms between the two layers, the device achieves enhanced photoelectric conversion efficiency (PCE) and stability. The best-performing device reached a PCE of 22.95 %. Moreover, under continuous light-soaking operation at 25 °C in ambient air, it retained 83 % of its initial PCE after 600 h.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"192 ","pages":"Article 109431"},"PeriodicalIF":4.2000,"publicationDate":"2025-03-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Science in Semiconductor Processing","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1369800125001684","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
Perovskite materials have garnered significant attention in both research and industry due to their excellent light absorption and unique optoelectronic properties. However, in perovskite solar cells (PSCs), severe non-radiative recombination at the interface between the carrier transport layer and the perovskite leads to performance losses, significantly hindering efficiency improvements. While the 2D/3D heterostructure can mitigate interfacial recombination losses, its asymmetric conductivity and potential uneven distribution may impair charge transfer and increase the series resistance of PSCs. To address the conflict between surface passivation and the conductivity of the passivated layer, we designed a novel heterojunction by substituting the 2D intermediate layer with a more conductive 3D perovskite. In this study, we introduce a bilayer FAPbI3/MAPbI3 perovskite prepared via solution processing. A 3D/3D double-layer perovskite structure was formed by depositing MAPbI3 onto the FAPbI3 substrate using a two-step dynamic spin-coating technique. UPS analysis confirmed this as a Type II 3D/3D perovskite heterojunction. By leveraging the energy band differences and transfer mechanisms between the two layers, the device achieves enhanced photoelectric conversion efficiency (PCE) and stability. The best-performing device reached a PCE of 22.95 %. Moreover, under continuous light-soaking operation at 25 °C in ambient air, it retained 83 % of its initial PCE after 600 h.
期刊介绍:
Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy.
Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications.
Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.