Solution-processed 3D/3D bilayer perovskite heterojunction solar cells

IF 4.6 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Materials Science in Semiconductor Processing Pub Date : 2025-06-15 Epub Date: 2025-03-05 DOI:10.1016/j.mssp.2025.109431
Hongyu Li, Xu Chen, Haijin Li, Huiyao Zhao, Jiashun Li, Tianhe Dong, Wenfeng Zhang
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Abstract

Perovskite materials have garnered significant attention in both research and industry due to their excellent light absorption and unique optoelectronic properties. However, in perovskite solar cells (PSCs), severe non-radiative recombination at the interface between the carrier transport layer and the perovskite leads to performance losses, significantly hindering efficiency improvements. While the 2D/3D heterostructure can mitigate interfacial recombination losses, its asymmetric conductivity and potential uneven distribution may impair charge transfer and increase the series resistance of PSCs. To address the conflict between surface passivation and the conductivity of the passivated layer, we designed a novel heterojunction by substituting the 2D intermediate layer with a more conductive 3D perovskite. In this study, we introduce a bilayer FAPbI3/MAPbI3 perovskite prepared via solution processing. A 3D/3D double-layer perovskite structure was formed by depositing MAPbI3 onto the FAPbI3 substrate using a two-step dynamic spin-coating technique. UPS analysis confirmed this as a Type II 3D/3D perovskite heterojunction. By leveraging the energy band differences and transfer mechanisms between the two layers, the device achieves enhanced photoelectric conversion efficiency (PCE) and stability. The best-performing device reached a PCE of 22.95 %. Moreover, under continuous light-soaking operation at 25 °C in ambient air, it retained 83 % of its initial PCE after 600 h.

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溶液处理3D/3D双层钙钛矿异质结太阳能电池
钙钛矿材料由于其优异的光吸收性能和独特的光电性能,在研究和工业上都受到了极大的关注。然而,在钙钛矿太阳能电池(PSCs)中,载流子输运层和钙钛矿之间的界面处严重的非辐射复合导致性能损失,严重阻碍了效率的提高。虽然2D/3D异质结构可以减轻界面复合损失,但其不对称的电导率和电位的不均匀分布可能会损害电荷转移并增加psc的串联电阻。为了解决表面钝化与钝化层导电性之间的冲突,我们设计了一种新的异质结,用更具导电性的三维钙钛矿取代二维中间层。在本研究中,我们介绍了通过溶液处理法制备的双层FAPbI3/MAPbI3钙钛矿。采用两步动态自旋镀膜技术将MAPbI3沉积在FAPbI3衬底上,形成了3D/3D双层钙钛矿结构。UPS分析证实这是II型3D/3D钙钛矿异质结。利用两层之间的能带差异和传递机制,器件实现了更高的光电转换效率(PCE)和稳定性。性能最好的器件PCE达到22.95%。此外,在环境空气中25°C的连续光浸泡操作下,600 h后其PCE保留了初始PCE的83%。
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来源期刊
Materials Science in Semiconductor Processing
Materials Science in Semiconductor Processing 工程技术-材料科学:综合
CiteScore
8.00
自引率
4.90%
发文量
780
审稿时长
42 days
期刊介绍: Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.
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