Iffat Ashraf , Muhammad Waseem Yaseen , Davoud Dastan , Saba Ahmad , Zhicheng Shi , Mohammad-Reza Zamani-Meymian , Mudassir Iqbal
{"title":"Synthesis of d-Ti3N MXene for potassium ion symmetric coin cell super capacitors","authors":"Iffat Ashraf , Muhammad Waseem Yaseen , Davoud Dastan , Saba Ahmad , Zhicheng Shi , Mohammad-Reza Zamani-Meymian , Mudassir Iqbal","doi":"10.1016/j.mseb.2025.118176","DOIUrl":null,"url":null,"abstract":"<div><div>Nitride-based MXenes offer advantages over their carbide and carbonitride counterparts, such as stronger M−X bond resulting in higher stability, making them particularly promising energy storage material. However, current inventory of nitride based MXenes is limited to only few materials such as Ti<sub>4</sub>N<sub>3</sub>, Ti<sub>3</sub>N<sub>2</sub> and Ti<sub>2</sub>N. In this study delaminated Ti<sub>3</sub>N, a novel 2d MXene, was fabricated by selective etching of Aluminum from Ti<sub>3</sub>AlN using molten salt and hydrofluoric (HF) acid, expanding the family of MXene materials and opening new avenues for energy storage applications. Material was characterized to confirm the crystal structure, morphology, elemental composition and oxidation states using various techniques. Moreover, the electrochemical results demonstrate that d-Ti<sub>3</sub>N MXene synthesized from mixture of molten salt has high specific capacitance of 76 Fg<sup>−1</sup>, which is 36 Fg<sup>−1</sup> for HF acid synthesis. Additionally, after 5000 cycles, the d-Ti3N MXene retains 87 % of its original capacity, demonstrating good cyclic stability. Furthermore, with 610 W kg<sup>−1</sup> power density, a symmetric capacitor based on d-Ti3N MXene can provide 4.4 Wh kg<sup>−1</sup> energy density. This demonstrates the potential of newly synthesized material in pseudocapacitors and other energy storage.</div></div>","PeriodicalId":18233,"journal":{"name":"Materials Science and Engineering: B","volume":"317 ","pages":"Article 118176"},"PeriodicalIF":3.9000,"publicationDate":"2025-03-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Science and Engineering: B","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0921510725001990","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
Nitride-based MXenes offer advantages over their carbide and carbonitride counterparts, such as stronger M−X bond resulting in higher stability, making them particularly promising energy storage material. However, current inventory of nitride based MXenes is limited to only few materials such as Ti4N3, Ti3N2 and Ti2N. In this study delaminated Ti3N, a novel 2d MXene, was fabricated by selective etching of Aluminum from Ti3AlN using molten salt and hydrofluoric (HF) acid, expanding the family of MXene materials and opening new avenues for energy storage applications. Material was characterized to confirm the crystal structure, morphology, elemental composition and oxidation states using various techniques. Moreover, the electrochemical results demonstrate that d-Ti3N MXene synthesized from mixture of molten salt has high specific capacitance of 76 Fg−1, which is 36 Fg−1 for HF acid synthesis. Additionally, after 5000 cycles, the d-Ti3N MXene retains 87 % of its original capacity, demonstrating good cyclic stability. Furthermore, with 610 W kg−1 power density, a symmetric capacitor based on d-Ti3N MXene can provide 4.4 Wh kg−1 energy density. This demonstrates the potential of newly synthesized material in pseudocapacitors and other energy storage.
期刊介绍:
The journal provides an international medium for the publication of theoretical and experimental studies and reviews related to the electronic, electrochemical, ionic, magnetic, optical, and biosensing properties of solid state materials in bulk, thin film and particulate forms. Papers dealing with synthesis, processing, characterization, structure, physical properties and computational aspects of nano-crystalline, crystalline, amorphous and glassy forms of ceramics, semiconductors, layered insertion compounds, low-dimensional compounds and systems, fast-ion conductors, polymers and dielectrics are viewed as suitable for publication. Articles focused on nano-structured aspects of these advanced solid-state materials will also be considered suitable.