CdCl2 treatment and its role in enhancing photodetection properties of CdTe and Cd1-xZnxTe films

IF 4.6 3区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY Materials Science and Engineering: B Pub Date : 2025-07-01 Epub Date: 2025-03-10 DOI:10.1016/j.mseb.2025.118208
S. Yılmaz , B.M. Başol , İ. Polat , M.Taykurt Daday , M. Tomakin , T. Küçükömeroğlu , E. Bacaksız
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Abstract

Close space sublimated CdTe and Cd1-xZnxTe (CZT) films were grown on glass substrates and CdCl2 activation was applied on these films to improve their physical, optical and electrical characteristics for photodetector applications. X-ray diffraction data showed that CdCl2 treatment of CdTe caused a reduction in the dislocation density and microstrain, whereas Zn incorporation/CdCl2 treatment slightly increased these values compared to the as-deposited CdTe films. Morphological examination indicated that CdCl2 activation transformed grains from faceted to rounded shape for both CdTe and CZT films. A band gap enlargement was observed from 1.45 eV to 1.47 eV for both CdTe and CZT films upon CdCl2 treatment. CdCl2-treated CZT films were used to fabricate photodetectors that exhibited the highest performance with a rise/fall time of 27/28 ms, sensitivity of 1301 %, responsivity of 0.0143 A/W, detectivity of 5.7x107 Jones and external quantum efficiency of 4.0 % under blue light illumination at 2 V.
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CdCl2处理及其在提高CdTe和Cd1-xZnxTe薄膜光探测性能中的作用
在玻璃衬底上生长了近空间升华的CdTe和Cd1-xZnxTe (CZT)薄膜,并在这些薄膜上施加CdCl2活化以改善其光电探测器应用的物理,光学和电学特性。x射线衍射数据表明,CdTe的CdCl2处理导致位错密度和微应变降低,而Zn掺入/CdCl2处理与沉积的CdTe膜相比,这些值略有增加。形态学检查表明,CdCl2活化使CdTe和CZT薄膜的晶粒由多面形转变为圆形。CdCl2处理后,CdTe膜和CZT膜的带隙从1.45 eV增大到1.47 eV。利用cdcl2处理的CZT薄膜制备的光电探测器,在2v蓝光照射下,其上升/下降时间为27/28 ms,灵敏度为1301%,响应率为0.0143 a /W,探测率为5.7x107 Jones,外量子效率为4.0%。
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来源期刊
Materials Science and Engineering: B
Materials Science and Engineering: B 工程技术-材料科学:综合
CiteScore
5.60
自引率
2.80%
发文量
481
审稿时长
3.5 months
期刊介绍: The journal provides an international medium for the publication of theoretical and experimental studies and reviews related to the electronic, electrochemical, ionic, magnetic, optical, and biosensing properties of solid state materials in bulk, thin film and particulate forms. Papers dealing with synthesis, processing, characterization, structure, physical properties and computational aspects of nano-crystalline, crystalline, amorphous and glassy forms of ceramics, semiconductors, layered insertion compounds, low-dimensional compounds and systems, fast-ion conductors, polymers and dielectrics are viewed as suitable for publication. Articles focused on nano-structured aspects of these advanced solid-state materials will also be considered suitable.
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