S Kinoshita, R Karasawa, Y Shimano, M Matsumura, T Yanagitani
{"title":"Zig-zag ScAlN 12-layer for shear mode BAW transformer application in rectenna.","authors":"S Kinoshita, R Karasawa, Y Shimano, M Matsumura, T Yanagitani","doi":"10.1109/TUFFC.2025.3546780","DOIUrl":null,"url":null,"abstract":"<p><p>Wireless power transfer (WPT) with rectennas is important for IoT sensor applications. Miniature GHz voltage transformers are more attractive than a large-size charge pump to operate the rectifiers efficiently. In this study, GHz bulk acoustic wave (BAW) piezoelectric transformers based on c-axis zig-zag polarization-inverted ScAlN thin films are proposed. The capacitive impedance (Z<sub>C</sub>) of n-layer c-axis zig-zag multilayers resonator is n-times larger than that of single-layer resonator. Therefore, shear mode operation in the c-axis zig-zag structure acts as a piezoelectric transformer. To demonstrate this principle, c-axis zig-zag ScAlN multilayers are grown using glancing angle sputtering deposition (GLAD). 12-layer c-axis 40-50 degrees zig-zag structure is clearly observed by SEM and XRD pole figure analysis. The open-circuit voltage gain approaching +15 dB in 600 MHz range in the HBAR type transformer based on polarization-inverted 12-layer thin film is observed. The experimental results and the theoretical predictions computed by the Mason's equivalent circuit model considering the effect of the polarization-inverted structure are in good agreement.</p>","PeriodicalId":13322,"journal":{"name":"IEEE transactions on ultrasonics, ferroelectrics, and frequency control","volume":"PP ","pages":""},"PeriodicalIF":3.0000,"publicationDate":"2025-03-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE transactions on ultrasonics, ferroelectrics, and frequency control","FirstCategoryId":"5","ListUrlMain":"https://doi.org/10.1109/TUFFC.2025.3546780","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"ACOUSTICS","Score":null,"Total":0}
引用次数: 0
Abstract
Wireless power transfer (WPT) with rectennas is important for IoT sensor applications. Miniature GHz voltage transformers are more attractive than a large-size charge pump to operate the rectifiers efficiently. In this study, GHz bulk acoustic wave (BAW) piezoelectric transformers based on c-axis zig-zag polarization-inverted ScAlN thin films are proposed. The capacitive impedance (ZC) of n-layer c-axis zig-zag multilayers resonator is n-times larger than that of single-layer resonator. Therefore, shear mode operation in the c-axis zig-zag structure acts as a piezoelectric transformer. To demonstrate this principle, c-axis zig-zag ScAlN multilayers are grown using glancing angle sputtering deposition (GLAD). 12-layer c-axis 40-50 degrees zig-zag structure is clearly observed by SEM and XRD pole figure analysis. The open-circuit voltage gain approaching +15 dB in 600 MHz range in the HBAR type transformer based on polarization-inverted 12-layer thin film is observed. The experimental results and the theoretical predictions computed by the Mason's equivalent circuit model considering the effect of the polarization-inverted structure are in good agreement.
期刊介绍:
IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control includes the theory, technology, materials, and applications relating to: (1) the generation, transmission, and detection of ultrasonic waves and related phenomena; (2) medical ultrasound, including hyperthermia, bioeffects, tissue characterization and imaging; (3) ferroelectric, piezoelectric, and piezomagnetic materials, including crystals, polycrystalline solids, films, polymers, and composites; (4) frequency control, timing and time distribution, including crystal oscillators and other means of classical frequency control, and atomic, molecular and laser frequency control standards. Areas of interest range from fundamental studies to the design and/or applications of devices and systems.