{"title":"Sub-5-nm monolayer KMgX (X=P, As, Sb)-based homogeneous CMOS devices for high-performance applications","authors":"Yandong Guo, Yuting Guo, Zhipeng Huan, Yue Jiang, Dongdong Wang, Xinyi Gao, Kairui Bian, Zengyun Gu, Shenyi Zhao, Xiaolu Duan, Liyan Lin, Hong-Li Zeng, Xiaohong Yan","doi":"10.1039/d5nr00264h","DOIUrl":null,"url":null,"abstract":"For CMOS electronics, the channel materials, which can offer symmetrical performance for n- and p-type devices, along with the ability to scale transistors down to the ultra-scale limit, are quite crucial in the next era beyond silicon. Monolayer KMgX (X=P, As, Sb) not only possesses atomically thin structure, but also exhibits high mobilities for both electrons and holes, being advantageous for symmetrical performance and shrinking devices’ size. Based on first-principles calculations, the device performance limit of sub-5-nm monolayer KMgX (X=P, As, Sb) metal-oxide semiconductor field-effect transistors (MOSFETs) with a double-gated setup are investigated. The results show that, for all the three KMgX configurations (X=P, As, Sb), both n- and p-type MOSFETs can meet the ITRS 2013 requirements for 2028 horizon in high-performance applications, even as Lg reduces to 3 nm. The ON-state currents of those systems exceed the performance of most previously reported monolayer MOSFETs. Especially, the 5-nm-Lg n-type KMgSb and KMgAs MOSFETs exhibit ultra-high ON-state currents of 3463 and 3248 A/ m, respectively. Furthermore, the ratios of subthreshold swing, ON-state current, fringe capacitance, delay time, and power-delay product between n- and p-type devices demonstrate a high degree of symmetry. Our results suggest that the use of monolayer KMgX (X=P, As, Sb) MOSFETs would be highly advantageous for the development of sub-5-nm homogeneous CMOS electronics.","PeriodicalId":92,"journal":{"name":"Nanoscale","volume":"123 1","pages":""},"PeriodicalIF":5.8000,"publicationDate":"2025-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Nanoscale","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1039/d5nr00264h","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"CHEMISTRY, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
For CMOS electronics, the channel materials, which can offer symmetrical performance for n- and p-type devices, along with the ability to scale transistors down to the ultra-scale limit, are quite crucial in the next era beyond silicon. Monolayer KMgX (X=P, As, Sb) not only possesses atomically thin structure, but also exhibits high mobilities for both electrons and holes, being advantageous for symmetrical performance and shrinking devices’ size. Based on first-principles calculations, the device performance limit of sub-5-nm monolayer KMgX (X=P, As, Sb) metal-oxide semiconductor field-effect transistors (MOSFETs) with a double-gated setup are investigated. The results show that, for all the three KMgX configurations (X=P, As, Sb), both n- and p-type MOSFETs can meet the ITRS 2013 requirements for 2028 horizon in high-performance applications, even as Lg reduces to 3 nm. The ON-state currents of those systems exceed the performance of most previously reported monolayer MOSFETs. Especially, the 5-nm-Lg n-type KMgSb and KMgAs MOSFETs exhibit ultra-high ON-state currents of 3463 and 3248 A/ m, respectively. Furthermore, the ratios of subthreshold swing, ON-state current, fringe capacitance, delay time, and power-delay product between n- and p-type devices demonstrate a high degree of symmetry. Our results suggest that the use of monolayer KMgX (X=P, As, Sb) MOSFETs would be highly advantageous for the development of sub-5-nm homogeneous CMOS electronics.
期刊介绍:
Nanoscale is a high-impact international journal, publishing high-quality research across nanoscience and nanotechnology. Nanoscale publishes a full mix of research articles on experimental and theoretical work, including reviews, communications, and full papers.Highly interdisciplinary, this journal appeals to scientists, researchers and professionals interested in nanoscience and nanotechnology, quantum materials and quantum technology, including the areas of physics, chemistry, biology, medicine, materials, energy/environment, information technology, detection science, healthcare and drug discovery, and electronics.