{"title":"Defect formation in plastically deformed natural Ib, IaAB, IaB, and low nitrogen diamonds","authors":"V.A. Nadolinny , Yu.N. Palyanov , M.I. Rakhmanova , Yu.M. Borzdov , A.Yu. Komarovskikh , A.P. Yelisseyev , O.P. Yurjeva , V.S. Shatsky , A.L. Ragozin","doi":"10.1016/j.diamond.2025.112207","DOIUrl":null,"url":null,"abstract":"<div><div>The analysis of experimental data on plastically deformed diamonds of different types Ib, IaAB, IaB, and low-nitrogen crystals has been performed. It has been established that the most characteristic defects in plastically deformed diamonds are broken bonds in the dislocation cores. These defects appear in electron paramagnetic resonance (EPR) as a single line with a g-factor of 2.0031 and in luminescence as a vibronic system with a zero-phonon line (ZPL) at 490.7 nm. During plastic deformation, atomic planes slide affecting extended defects such as nitrogen A and B centers, leading to their destruction. For A centers, one of the nitrogen atoms can be displaced by 2.5 Å or greater, forming pairs of impurity atoms separated by two or more carbon atoms. For these paired defects, electron transfer from one of the nitrogen atoms to the broken bonds in the dislocation cores occurs, resulting in the formation of charge transfer complexes. The charge transfer optical band observed in the absorption spectra, which has a maximum at 550 nm, is responsible for the brownish color of these crystals. When the slip planes involve B centers, their destruction leads to the formation of N<sub>3</sub>V and C centers. Both the N<sub>3</sub>V and C centers exist in a non-paramagnetic state due to the transfer of an electron from the donor nitrogen to the N<sub>3</sub>V center. Plastically deformed type IaB crystals are colorless or exhibit a slight bluish tinge due to the formation of N<sub>3</sub>V centers. In the case of type Ib diamonds, impurity nitrogen is primarily present in the form of C centers, which act as electron donors for acceptors such as the broken bonds in the dislocation cores. Consequently, for plastically deformed type Ib crystals, the N<sup>+</sup> nitrogen state is detected, which anneals out at temperatures above 2100 °C, specifically in the temperature range when dislocations are destroyed.</div></div>","PeriodicalId":11266,"journal":{"name":"Diamond and Related Materials","volume":"154 ","pages":"Article 112207"},"PeriodicalIF":4.3000,"publicationDate":"2025-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Diamond and Related Materials","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S092596352500264X","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, COATINGS & FILMS","Score":null,"Total":0}
引用次数: 0
Abstract
The analysis of experimental data on plastically deformed diamonds of different types Ib, IaAB, IaB, and low-nitrogen crystals has been performed. It has been established that the most characteristic defects in plastically deformed diamonds are broken bonds in the dislocation cores. These defects appear in electron paramagnetic resonance (EPR) as a single line with a g-factor of 2.0031 and in luminescence as a vibronic system with a zero-phonon line (ZPL) at 490.7 nm. During plastic deformation, atomic planes slide affecting extended defects such as nitrogen A and B centers, leading to their destruction. For A centers, one of the nitrogen atoms can be displaced by 2.5 Å or greater, forming pairs of impurity atoms separated by two or more carbon atoms. For these paired defects, electron transfer from one of the nitrogen atoms to the broken bonds in the dislocation cores occurs, resulting in the formation of charge transfer complexes. The charge transfer optical band observed in the absorption spectra, which has a maximum at 550 nm, is responsible for the brownish color of these crystals. When the slip planes involve B centers, their destruction leads to the formation of N3V and C centers. Both the N3V and C centers exist in a non-paramagnetic state due to the transfer of an electron from the donor nitrogen to the N3V center. Plastically deformed type IaB crystals are colorless or exhibit a slight bluish tinge due to the formation of N3V centers. In the case of type Ib diamonds, impurity nitrogen is primarily present in the form of C centers, which act as electron donors for acceptors such as the broken bonds in the dislocation cores. Consequently, for plastically deformed type Ib crystals, the N+ nitrogen state is detected, which anneals out at temperatures above 2100 °C, specifically in the temperature range when dislocations are destroyed.
期刊介绍:
DRM is a leading international journal that publishes new fundamental and applied research on all forms of diamond, the integration of diamond with other advanced materials and development of technologies exploiting diamond. The synthesis, characterization and processing of single crystal diamond, polycrystalline films, nanodiamond powders and heterostructures with other advanced materials are encouraged topics for technical and review articles. In addition to diamond, the journal publishes manuscripts on the synthesis, characterization and application of other related materials including diamond-like carbons, carbon nanotubes, graphene, and boron and carbon nitrides. Articles are sought on the chemical functionalization of diamond and related materials as well as their use in electrochemistry, energy storage and conversion, chemical and biological sensing, imaging, thermal management, photonic and quantum applications, electron emission and electronic devices.
The International Conference on Diamond and Carbon Materials has evolved into the largest and most well attended forum in the field of diamond, providing a forum to showcase the latest results in the science and technology of diamond and other carbon materials such as carbon nanotubes, graphene, and diamond-like carbon. Run annually in association with Diamond and Related Materials the conference provides junior and established researchers the opportunity to exchange the latest results ranging from fundamental physical and chemical concepts to applied research focusing on the next generation carbon-based devices.