A New Approach to Design and Implementation of 2-Input XOR Gate Using 4-Transistor

Q3 Engineering Micro and Nanosystems Pub Date : 2020-12-01 DOI:10.2174/1876402912666200309120205
H. Maity
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引用次数: 0

Abstract

This paper proposed the design and implementation of a 2-input XOR gate using 4- transistor. The XOR gate can be designed using NOT gate and 2:1 multiplexer. The NOT gate is designed using two metal–oxide–semiconductor field-effect transistors MOSFETs and an approximate 2:1 multiplexer. The 2:1 multiplexer is designed using two MOSFETs. So, an XOR gate can be designed using four transistors. The proposed work theoretically and experimentally describes the 2-input XOR gate using 4- transistor. The proposed work was verified using Xilinx (ISE Design Suite).
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一种用四晶体管设计和实现二输入异或门的新方法
本文提出了一种使用4晶体管的2输入XOR门的设计和实现。XOR门可以使用NOT门和2:1多路复用器来设计。NOT门由两个金属-氧化物-半导体场效应晶体管MOSFET和一个近似2:1的多路复用器设计。2:1多路复用器是使用两个MOSFET设计的。因此,XOR门可以由四个晶体管设计。所提出的工作从理论和实验上描述了使用4晶体管的2输入XOR门。使用Xilinx(ISE设计套件)对拟议的工作进行了验证。
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来源期刊
Micro and Nanosystems
Micro and Nanosystems Engineering-Building and Construction
CiteScore
1.60
自引率
0.00%
发文量
50
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