{"title":"An Improved Through-Only De-Embedding Method for 110-GHz On-Wafer RF Device Characterization","authors":"Ruitao Wang, Chenguang Li, Yan Wang","doi":"10.1109/LMWC.2022.3173970","DOIUrl":null,"url":null,"abstract":"In this letter, an improved through-only de-embedding method up to 110 GHz without additional dummy structure is developed and implemented. The highlight of this method is that the distributed effect of the metal interconnections between the pad and the intrinsic device is elaborately considered instead of simply modeled as a lumped constant circuit, and the optimal length of the transmission line is carefully derived. Based on this, the parasitics are removed by calculating the ABCD matrices. On-wafer RF passive devices, including T-coil and capacitor, are fabricated on 28-nm CMOS technology to verify the accuracy of the proposed method from 10 to 110 GHz. The measurement results after de-embedding by the proposed method are in good agreement with the electromagnetic simulation results of the intrinsic devices, which demonstrates that the proposed method has a better performance than conventional methods.","PeriodicalId":13130,"journal":{"name":"IEEE Microwave and Wireless Components Letters","volume":"32 1","pages":"1219-1222"},"PeriodicalIF":2.9000,"publicationDate":"2022-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Microwave and Wireless Components Letters","FirstCategoryId":"5","ListUrlMain":"https://doi.org/10.1109/LMWC.2022.3173970","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
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Abstract
In this letter, an improved through-only de-embedding method up to 110 GHz without additional dummy structure is developed and implemented. The highlight of this method is that the distributed effect of the metal interconnections between the pad and the intrinsic device is elaborately considered instead of simply modeled as a lumped constant circuit, and the optimal length of the transmission line is carefully derived. Based on this, the parasitics are removed by calculating the ABCD matrices. On-wafer RF passive devices, including T-coil and capacitor, are fabricated on 28-nm CMOS technology to verify the accuracy of the proposed method from 10 to 110 GHz. The measurement results after de-embedding by the proposed method are in good agreement with the electromagnetic simulation results of the intrinsic devices, which demonstrates that the proposed method has a better performance than conventional methods.
期刊介绍：
The IEEE Microwave and Wireless Components Letters (MWCL) publishes four-page papers (3 pages of text + up to 1 page of references) that focus on microwave theory, techniques and applications as they relate to components, devices, circuits, biological effects, and systems involving the generation, modulation, demodulation, control, transmission, and detection of microwave signals. This includes scientific, technical, medical and industrial activities. Microwave theory and techniques relates to electromagnetic waves in the frequency range of a few MHz and a THz; other spectral regions and wave types are included within the scope of the MWCL whenever basic microwave theory and techniques can yield useful results. Generally, this occurs in the theory of wave propagation in structures with dimensions comparable to a wavelength, and in the related techniques for analysis and design.
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