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Theory and Time-Domain Simulation of Third-Order Intermodulation Suppression by Signal Injection 信号注入抑制三阶互调的理论与时域仿真
IF 3 2区 工程技术 Q2 Engineering Pub Date : 2022-12-01 DOI: 10.1109/LMWC.2022.3186938
Zongbiao Zhang, Zongbiao Zhang, Ming Zhi Li
This letter reports a new theoretical analysis of third-order intermodulation (IM3) reduction in nonlinear communication amplifiers by signal injection. On the basis of well-known Volterra series analysis, we put forward a general model that can analyze both the qualitative and quantitative effects of injected signal parameters on output IM3s, which previous literatures failed to achieve. Our theory can directly calculate the optimal amplitude and phase of single injected signal and points out the duality for some dual-signal injections which can help reduce their parameter scanning complexity from 4-D to 2-D. These conclusions are in good agreement with the simulation of two traveling wave tube (TWT) amplifiers by 3-D-FDTD-PIC code and CST and MTSS. Our work proposes an original analysis about how to adjust injected external signals to obtain best IM3 cancellation in communication systems, and boosts the research efficiency for new signal injection techniques from a novel perspective.
本文报道了通过信号注入降低非线性通信放大器中三阶互调(IM3)的新理论分析。在著名的Volterra级数分析的基础上,我们提出了一个通用的模型,该模型可以定性和定量地分析注入信号参数对输出IM3的影响,而以前的文献未能实现这一点。我们的理论可以直接计算单注入信号的最佳幅度和相位,并指出一些双信号注入的对偶性,这有助于将其参数扫描复杂度从4-D降低到2-D。这些结论与用3-D-FDTD-PIC代码以及CST和MTSS对两个行波管放大器的仿真结果吻合较好。我们的工作提出了一个关于如何调整注入的外部信号以在通信系统中获得最佳IM3消除的原始分析,并从一个新的角度提高了新信号注入技术的研究效率。
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引用次数: 0
Silicon Photonic Radar Receiver IC for mm-Wave Large Aperture MIMO Radar Using Optical Clock Distribution 基于光时钟分布的毫米波大孔径MIMO雷达用硅光子雷达接收机集成电路
IF 3 2区 工程技术 Q2 Engineering Pub Date : 2022-12-01 DOI: 10.1109/LMWC.2022.3186432
Stephan Kruse, Sergiy Gudyriev, Pascal Kneuper, T. Schwabe, M. Meinecke, H. Kurz, J. Scheytt
A silicon photonics millimeter-wave (mm-wave) radar receiver (RX) integrated circuit (IC) for a multiple-input–multiple-output (MIMO) imaging radar is presented. Optical clock distributed over fiber enables coherent operation of several transceiver frontends for large apertures and finer angular resolution in the MIMO imaging radars. All electronic and photonic components needed to receive the optical clock signal, the electronic radio frequency (RF) signal, and the in-phase quadrature (IQ) downconvertion to the baseband is integrated in the RX frontend IC. The RX chip supports optical clock signals at 1310- and 1550-nm optical wavelengths. The chip is implemented in IHPs pre-production photonic 250-nm SiGe BiCMOS technology. At an intermediate frequency (IF) of 1 MHz, the measured conversion gain (CG) is 6.95 dB at an RF of 66 GHz and −11.18 dB at an RF of 77 GHz from −5-dBm optical modulation amplitude (OMA) and −13-dBm RF power. The RX IC dissipates 770 mW and is operated with a single 3.6-V power supply. For the realization of an optical receive path, an off-chip lithium niobate (LiNbO3) Mach–Zehnder modulator (MZM) was used. The optical receive path achieves a saturated OMA of −6 dBm at an RF of 77 GHz and at an IF of 1 MHz.
介绍了一种用于多输入多输出成像雷达的硅光子毫米波雷达接收机集成电路。分布在光纤上的光学时钟使MIMO成像雷达中的大孔径和更精细的角分辨率的几个收发器前端能够相干操作。接收光时钟信号、电子射频(RF)信号和到基带的同相正交(IQ)下变频所需的所有电子和光子组件都集成在RX前端IC中。RX芯片支持1310和1550 nm光波长的光时钟信号。该芯片采用IHPs预生产的250nm SiGe-BiCMOS光子技术实现。在1 MHz的中频(IF)下,从−5-dBm光调制幅度(OMA)和−13 dBm RF功率,在66 GHz的RF下测得的转换增益(CG)为6.95 dB,在77 GHz的RF上测得的转化增益为−11.18 dB。RX IC消耗770mW,并使用单个3.6V电源进行操作。为了实现光接收路径,使用了片外铌酸锂(LiNbO3)马赫-曾德尔调制器(MZM)。光接收路径在77 GHz的RF和1 MHz的IF下实现−6 dBm的饱和OMA。
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引用次数: 4
Model-Based VF Technique for Parasitic Reflections Reduction of Frequency-Domain Chipless RFID Systems 基于模型的VF频域无芯片RFID系统寄生反射抑制技术
IF 3 2区 工程技术 Q2 Engineering Pub Date : 2022-12-01 DOI: 10.1109/LMWC.2022.3194322
Javad Aliasgari, N. Karmakar
In a frequency-domain chipless RFID system, the backscattered signal from a tag is directly obtained in the frequency domain over limited bandwidth. However, to reduce the parasitic reflections, it is crucial to obtain the backscattered signal in the time domain. This letter proposes a precise quasi-analytic method, known as the model-based vector fitting (VF) technique, to provide the closed-form equation of the backscattered response in the time domain. The proposed method successfully recovers a tag’s identification (ID) among parasitic reflections using a single tag measurement without requiring prior knowledge about the tag.
在频域无芯片RFID系统中,在有限的带宽上在频域中直接获得来自标签的反向散射信号。然而,为了减少寄生反射,在时域中获得反向散射信号是至关重要的。这封信提出了一种精确的准解析方法,称为基于模型的矢量拟合(VF)技术,以提供时域中反向散射响应的闭合形式方程。所提出的方法使用单个标签测量在寄生反射中成功地恢复了标签的标识(ID),而不需要关于标签的先验知识。
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引用次数: 1
A Millimeter-Wave Variable-Gain Power Amplifier With P₁ dB Improvement Technique in 65-nm CMOS 65纳米CMOS中P₁dB改进技术的毫米波变增益功率放大器
IF 3 2区 工程技术 Q2 Engineering Pub Date : 2022-12-01 DOI: 10.1109/LMWC.2022.3177656
Xiongyao Luo, W. Feng, Haoshen Zhu, Liang Wu, W. Che, Q. Xue
A millimeter-wave (MMW) variable-gain power amplifier (VGPA) with $P_{mathrm {1,dB}}$ improvement technique is proposed. The proposed VGPA consists of a postdistortion power amplifier (PDPA) and a variable-gain amplifier (VGA), for realizing high output power 1-dB compression point ( $P_{mathrm {1,dB}}$ ) and variable gain, respectively. To improve the $P_{mathrm {1,dB}}$ performances, a postdistortion technique with peaking-mode gain response shaping is proposed. This new approach has less amplitude-to-amplitude (AM–AM) distortion. Fabricated in 65-nm CMOS process, the proposed VGPA achieves 16-dBm output $P_{mathrm {1,dB}}$ with 29.5% power added efficiency (PAE) and 16.7-dBm saturated output power ( $P_{mathrm {sat}}$ ) with 34% peak PAE. The maximum gain reaches 33.1 dB with 3-dB bandwidth from 23.1 to 29 GHz and 31.1-dB dynamic range of gain adjustment.
提出了一种采用$P_{math {1,dB}}$改进技术的毫米波变增益功率放大器(VGPA)。该VGPA由一个后失真功率放大器(PDPA)和一个可变增益放大器(VGA)组成,分别实现高输出功率1-dB压缩点($P_{ mathm {1,dB}}$)和可变增益。为了提高$P_{ mathm {1,dB}}$的性能,提出了一种带峰模增益响应整形的后失真技术。这种新方法具有较小的幅值对幅值(AM-AM)失真。该VGPA采用65纳米CMOS工艺制造,输出功率为16 dbm $P_{mathrm {1,dB}}$,功率附加效率(PAE)为29.5%,饱和输出功率为16.7 dbm $P_{mathrm {sat}}$,峰值PAE为34%。最大增益达到33.1 dB, 3db带宽为23.1 ~ 29 GHz,增益调节动态范围为31.1 dB。
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引用次数: 0
Initial Experimental Tests of an ANN-Based Microwave Imaging Technique for Neck Diagnostics 基于神经网络的微波成像颈部诊断技术的初步实验研究
IF 3 2区 工程技术 Q2 Engineering Pub Date : 2022-12-01 DOI: 10.1109/LMWC.2022.3194805
C. Dachena, A. Fedeli, A. Fanti, M. B. Lodi, G. Fumera, M. Pastorino, A. Randazzo
In this letter, a microwave imaging strategy based on an artificial neural network (ANN) is applied, for the first time, to experimental data gathered from simplified neck phantoms. The ANN is used for solving the underlying inverse scattering problem, with the aim of retrieving the dielectric properties of the neck for monitoring and diagnostic purposes. The ANN is trained using simulated phantoms, to overcome the limited availability of experimental data. First, a simple configuration with a liquid-filled glass beaker is tested. Then, simplified 3-D-printed models of the human neck are considered. The preliminary findings indicate the possibility of training the network with numerical simulations and testing it against experimental measurements.
在这封信中,基于人工神经网络(ANN)的微波成像策略首次应用于从简化的颈部幻影中收集的实验数据。人工神经网络用于解决潜在的逆散射问题,目的是检索颈部的介电特性,用于监测和诊断目的。人工神经网络使用模拟的幻影进行训练,以克服实验数据的有限可用性。首先,测试了一个带有装满液体的玻璃烧杯的简单配置。然后,考虑了人体颈部的简化3d打印模型。初步研究结果表明,可以通过数值模拟训练该网络,并对其进行实验测试。
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引用次数: 3
Efficient Signal Alignment Algorithm for Undersampling Digital Predistortion 用于欠采样数字预失真的有效信号对准算法
IF 3 2区 工程技术 Q2 Engineering Pub Date : 2022-12-01 DOI: 10.1109/LMWC.2022.3192925
Chengye Jiang, W. Qiao, Guichen Yang, Falin Liu
Undersampling is an effective way to reduce the cost of digital predistortion (DPD), but it poses challenges for signal alignment, especially for fractional delay alignment. In this letter, a Taylor expansion-based method for fractional delay approximation solution is proposed. To verify the proposed alignment algorithm, the basis manifold regularization (BMR) is introduced to ensure that the DPD can converge to a satisfactory performance even at an ultralow sampling rate. Simulations and experimental tests demonstrate that the proposed method not only has high alignment accuracy but also low complexity in comparison with traditional methods.
欠采样是降低数字预失真(DPD)成本的有效方法,但它对信号对准,尤其是分数延迟对准提出了挑战。在这封信中,提出了一种基于泰勒展开的分数延迟近似解的方法。为了验证所提出的对准算法,引入了基流形正则化(BMR),以确保DPD即使在超低采样率下也能收敛到令人满意的性能。仿真和实验测试表明,与传统方法相比,该方法不仅具有较高的对准精度,而且复杂度较低。
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引用次数: 1
A Low Power Sub-GHz Wideband LNA Employing Current-Reuse and Device-Reuse Positive Shunt-Feedback Technique 采用电流复用和器件复用正并联反馈技术的低功率亚GHz宽带LNA
IF 3 2区 工程技术 Q2 Engineering Pub Date : 2022-12-01 DOI: 10.1109/LMWC.2022.3191116
Kuang-Wei Cheng, Wei-Wei Chen, Shang-De Yang
This letter presents a low-power current-reuse and device-reuse low noise amplifier (LNA) for sub-GHz wideband applications. Based on the shunt-feedback common-gate (SFBCG) hybrid topology and the proposed current/device-reuse shunt-feedback (SFB) technique, $g_{m}$ restriction is alleviated. Moreover, the degree of design freedom is added by coupling the output to the gate of the in-phase current source transistor to activate positive feedback without extra power burden, thereby achieving a higher gain and lower noise design. Implemented in 90-nm CMOS technology, this LNA prototype has an active area of 0.075 mm2. The measurement results show a peak gain of 21.3 dB with 3-dB bandwidth of 50–800 MHz, noise figure of 4.5 dB, third-order intercept point (IIP3) of −7.1 dBm, and power dissipation of 1.2 mW.
本文介绍了一种用于sub-GHz宽带应用的低功耗电流复用和器件复用低噪声放大器(LNA)。基于并联反馈共门(SFBCG)混合拓扑和提出的电流/设备复用并联反馈(SFB)技术,减轻了$g_{m}$的限制。此外,通过将输出耦合到同相电流源晶体管的栅极来激活正反馈而无需额外的功率负担,从而增加了设计自由度,从而实现了更高的增益和更低的噪声设计。该LNA原型采用90纳米CMOS技术,有效面积为0.075 mm2。测量结果表明,该系统的峰值增益为21.3 dB, 3db带宽为50-800 MHz,噪声系数为4.5 dB,三阶截距点(IIP3)为−7.1 dBm,功耗为1.2 mW。
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引用次数: 0
Dual-Band VCO Using High Quality Factor Two Orthogonally Located Inductors in 0.18-μm CMOS Technology 采用0.18 μm CMOS技术的高品质因数正交电感双带压控振荡器
IF 3 2区 工程技术 Q2 Engineering Pub Date : 2022-12-01 DOI: 10.1109/LMWC.2022.3179002
I. Mansour, Marwa Mansour, M. Aboualalaa, A. Allam, A. Abdel-Rahman, R. Pokharel, M. Abo-Zahhad
This work introduces a new topology for designing low-phase noise (PN) dual-band voltage-controlled oscillator (VCO) by proposing orthogonally located inductors in 0.18- $mu text{m}$ CMOS. The inductors are implemented using five metal layers keeping the lowest layer empty to maximize the quality ( $Q$ ) factor. The first inductor is two halves shunted octagonal loops using the top layer (M6) and utilized in cross-coupled VCO, while the second inductor is formed by four C-shaped shunted inductors using the lower four layers $text{M}_{mathrm {5-2}}$ and used in current-reuse (CR) VCO. The M6 inductor improves the $Q$ -factor by more than 25%over one loop inductor in the frequency band of interest, while the $text{M}_{mathrm {5-2}}$ inductor uses four shunt layers to boost the $Q$ -factor by 28% in $K$ -band compared to the single-layer inductor. The VCO oscillates from 22.36 to 23.4 GHz with PN of −112.4 dBc/Hz at 1 MHz and figure of merit (FoM) of −188.8 dBc/Hz, while the CR VCO has tuning range from 23.8 to 25.7 GHz with a PN of −107 dBc/Hz at 1 MHz and FoM −185.8 dBc/Hz.
本文介绍了一种用于设计低相位噪声(PN)双频压控振荡器(VCO)的新拓扑结构,提出了0.18-$mutext{m}$CMOS中正交定位的电感器。电感器使用五个金属层来实现,保持最低层为空以最大化质量($Q$)因子。第一个电感器是使用顶层(M6)的两个半分流八边形环,并用于交叉耦合的VCO,而第二电感器由使用下面四层的四个C形分流电感器形成$text{M}_{mathrm{5-2}}$并在当前重用(CR)VCO中使用。M6电感器比感兴趣频带中的一个环路电感器将$Q$-因子提高了25%以上,而$text{M}_{mathrm{5-2}}$电感器使用四个分流层,与单层电感器相比,在$K$频带中将$Q$因子提高28%。VCO在22.36至23.4 GHz之间振荡,1 MHz时PN为−112.4 dBc/Hz,品质因数(FoM)为−188.8 dBc/Hz;而CR VCO的调谐范围为23.8至25.7 GHz,1 MHz下PN为−107 dBc/Hz。
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引用次数: 1
Investigation of a Modified Flat-Roofed Sine Waveguide Slow-Wave Structure for Wideband 220-GHz TWT 宽带220-GHz行波管改进平顶正弦波波导慢波结构研究
IF 3 2区 工程技术 Q2 Engineering Pub Date : 2022-12-01 DOI: 10.1109/LMWC.2022.3193447
Jian Zhang, Xuebing Jiang, Jin Xu, Lingna Yue, H. Yin, Shuangzhu Fang, R. Yang, P.C. Yin, Jinchi Cai, G. Zhao, Wenxiang Wang, Zhenhua Wu, Dazhi Li, Wenxin Liu, Minzhi Huang, Yanyu Wei
In this letter, the modified flat-roofed sine waveguide slow-wave structure (FRSWG-SWS) is proposed for the wideband high-power sub-terahertz traveling-wave tube (sub-THz TWT), which possesses the advantages of wide operating bandwidth, low loss, minimal reflection, and ease of fabrication. The simulation results demonstrate that the transmission parameter is more than −5.0 dB in the frequency range between 210 and 250 GHz. The beam–wave interaction results indicate that the modified FRSWG can provide over 50 W of output power and 30 dB of gain from 205 to 250 GHz with sheet electron beam with a voltage of 20.8 kV and a current of 150 mA. Finally, we use high-speed milling to fabricate the modified FRSWG by the nano-Computer Numerical Control (CNC) technology. The cold test results demonstrate that the modified FRSWG has low loss and good reflection characteristics.
本文提出了一种用于亚太赫兹行波管(sub-THz TWT)的改进平顶正弦波波导慢波结构(FRSWG-SWS),该结构具有工作带宽宽、损耗低、反射最小、易于制造等优点。仿真结果表明,在210 ~ 250 GHz频率范围内,传输参数大于- 5.0 dB。波束相互作用结果表明,在205 ~ 250 GHz范围内,在电压为20.8 kV、电流为150 mA的片状电子束下,改进后的FRSWG可提供超过50 W的输出功率和30 dB的增益。最后,利用高速铣削技术,利用纳米计算机数控(CNC)技术制备了改性的FRSWG。冷试验结果表明,改进后的FRSWG具有低损耗和良好的反射特性。
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引用次数: 0
A 230-GHz Endfire SIS Mixer With Near Quantum-Limited Performance 具有近量子限制性能的230 ghz终末SIS混频器
IF 3 2区 工程技术 Q2 Engineering Pub Date : 2022-12-01 DOI: 10.1109/LMWC.2022.3190701
J. Garrett, B. Tan, C. Chaumont, F. Boussaha, G. Yassin
In this letter, we report the near quantum-limited performance of a 230 GHz endfire superconductor-insulator-superconductor (SIS) mixer utilizing a Nb/Al-AlOx/Nb trilayer. An important feature of this mixer is its use of a unilateral finline for the waveguide-to-planar circuit transition, which allows for a wide radiofrequency (RF) bandwidth, a simple waveguide structure with easy alignment, and for the mixer chip to be aligned along the optical axis. Each of these factors is beneficial in the construction of large-format focal plane arrays. We tested the new finline mixer from 210 to 260 GHz in a liquid helium cryostat at ~4 K. The best recorded noise temperature was approximately twice the quantum limit, which is comparable to conventional radial probe mixers. This suggests that endfire SIS mixers can be used in large format arrays, comprising 100s or even 1000s of SIS mixing elements, while retaining state-of-the-art quantum mixing performance.
在这封信中,我们报告了使用Nb/Al-AlOx/Nb三层的230 GHz端火超导体-绝缘体-超导体(SIS)混频器的近量子限制性能。该混频器的一个重要特点是它使用单边鳍线进行波导到平面电路的过渡,这允许宽的射频(RF)带宽,简单的波导结构易于校准,并且混频器芯片沿光轴对齐。这些因素中的每一个都有利于构造大画幅焦平面阵列。我们在~4 K的液氦低温恒温器中测试了210 ~ 260 GHz的新鳍线混频器。记录的最佳噪声温度约为量子极限的两倍,与传统的径向探头混频器相当。这表明终端SIS混频器可以用于包含100个甚至1000个SIS混频器元素的大格式阵列,同时保留最先进的量子混频器性能。
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引用次数: 1
期刊
IEEE Microwave and Wireless Components Letters
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