Pub Date : 2022-12-01DOI: 10.1109/LMWC.2022.3186938
Zongbiao Zhang, Zongbiao Zhang, Ming Zhi Li
This letter reports a new theoretical analysis of third-order intermodulation (IM3) reduction in nonlinear communication amplifiers by signal injection. On the basis of well-known Volterra series analysis, we put forward a general model that can analyze both the qualitative and quantitative effects of injected signal parameters on output IM3s, which previous literatures failed to achieve. Our theory can directly calculate the optimal amplitude and phase of single injected signal and points out the duality for some dual-signal injections which can help reduce their parameter scanning complexity from 4-D to 2-D. These conclusions are in good agreement with the simulation of two traveling wave tube (TWT) amplifiers by 3-D-FDTD-PIC code and CST and MTSS. Our work proposes an original analysis about how to adjust injected external signals to obtain best IM3 cancellation in communication systems, and boosts the research efficiency for new signal injection techniques from a novel perspective.
{"title":"Theory and Time-Domain Simulation of Third-Order Intermodulation Suppression by Signal Injection","authors":"Zongbiao Zhang, Zongbiao Zhang, Ming Zhi Li","doi":"10.1109/LMWC.2022.3186938","DOIUrl":"https://doi.org/10.1109/LMWC.2022.3186938","url":null,"abstract":"This letter reports a new theoretical analysis of third-order intermodulation (IM3) reduction in nonlinear communication amplifiers by signal injection. On the basis of well-known Volterra series analysis, we put forward a general model that can analyze both the qualitative and quantitative effects of injected signal parameters on output IM3s, which previous literatures failed to achieve. Our theory can directly calculate the optimal amplitude and phase of single injected signal and points out the duality for some dual-signal injections which can help reduce their parameter scanning complexity from 4-D to 2-D. These conclusions are in good agreement with the simulation of two traveling wave tube (TWT) amplifiers by 3-D-FDTD-PIC code and CST and MTSS. Our work proposes an original analysis about how to adjust injected external signals to obtain best IM3 cancellation in communication systems, and boosts the research efficiency for new signal injection techniques from a novel perspective.","PeriodicalId":13130,"journal":{"name":"IEEE Microwave and Wireless Components Letters","volume":"32 1","pages":"1387-1390"},"PeriodicalIF":3.0,"publicationDate":"2022-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"49253065","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-12-01DOI: 10.1109/LMWC.2022.3186432
Stephan Kruse, Sergiy Gudyriev, Pascal Kneuper, T. Schwabe, M. Meinecke, H. Kurz, J. Scheytt
A silicon photonics millimeter-wave (mm-wave) radar receiver (RX) integrated circuit (IC) for a multiple-input–multiple-output (MIMO) imaging radar is presented. Optical clock distributed over fiber enables coherent operation of several transceiver frontends for large apertures and finer angular resolution in the MIMO imaging radars. All electronic and photonic components needed to receive the optical clock signal, the electronic radio frequency (RF) signal, and the in-phase quadrature (IQ) downconvertion to the baseband is integrated in the RX frontend IC. The RX chip supports optical clock signals at 1310- and 1550-nm optical wavelengths. The chip is implemented in IHPs pre-production photonic 250-nm SiGe BiCMOS technology. At an intermediate frequency (IF) of 1 MHz, the measured conversion gain (CG) is 6.95 dB at an RF of 66 GHz and −11.18 dB at an RF of 77 GHz from −5-dBm optical modulation amplitude (OMA) and −13-dBm RF power. The RX IC dissipates 770 mW and is operated with a single 3.6-V power supply. For the realization of an optical receive path, an off-chip lithium niobate (LiNbO3) Mach–Zehnder modulator (MZM) was used. The optical receive path achieves a saturated OMA of −6 dBm at an RF of 77 GHz and at an IF of 1 MHz.
{"title":"Silicon Photonic Radar Receiver IC for mm-Wave Large Aperture MIMO Radar Using Optical Clock Distribution","authors":"Stephan Kruse, Sergiy Gudyriev, Pascal Kneuper, T. Schwabe, M. Meinecke, H. Kurz, J. Scheytt","doi":"10.1109/LMWC.2022.3186432","DOIUrl":"https://doi.org/10.1109/LMWC.2022.3186432","url":null,"abstract":"A silicon photonics millimeter-wave (mm-wave) radar receiver (RX) integrated circuit (IC) for a multiple-input–multiple-output (MIMO) imaging radar is presented. Optical clock distributed over fiber enables coherent operation of several transceiver frontends for large apertures and finer angular resolution in the MIMO imaging radars. All electronic and photonic components needed to receive the optical clock signal, the electronic radio frequency (RF) signal, and the in-phase quadrature (IQ) downconvertion to the baseband is integrated in the RX frontend IC. The RX chip supports optical clock signals at 1310- and 1550-nm optical wavelengths. The chip is implemented in IHPs pre-production photonic 250-nm SiGe BiCMOS technology. At an intermediate frequency (IF) of 1 MHz, the measured conversion gain (CG) is 6.95 dB at an RF of 66 GHz and −11.18 dB at an RF of 77 GHz from −5-dBm optical modulation amplitude (OMA) and −13-dBm RF power. The RX IC dissipates 770 mW and is operated with a single 3.6-V power supply. For the realization of an optical receive path, an off-chip lithium niobate (LiNbO3) Mach–Zehnder modulator (MZM) was used. The optical receive path achieves a saturated OMA of −6 dBm at an RF of 77 GHz and at an IF of 1 MHz.","PeriodicalId":13130,"journal":{"name":"IEEE Microwave and Wireless Components Letters","volume":"32 1","pages":"1447-1450"},"PeriodicalIF":3.0,"publicationDate":"2022-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"49435420","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-12-01DOI: 10.1109/LMWC.2022.3194322
Javad Aliasgari, N. Karmakar
In a frequency-domain chipless RFID system, the backscattered signal from a tag is directly obtained in the frequency domain over limited bandwidth. However, to reduce the parasitic reflections, it is crucial to obtain the backscattered signal in the time domain. This letter proposes a precise quasi-analytic method, known as the model-based vector fitting (VF) technique, to provide the closed-form equation of the backscattered response in the time domain. The proposed method successfully recovers a tag’s identification (ID) among parasitic reflections using a single tag measurement without requiring prior knowledge about the tag.
{"title":"Model-Based VF Technique for Parasitic Reflections Reduction of Frequency-Domain Chipless RFID Systems","authors":"Javad Aliasgari, N. Karmakar","doi":"10.1109/LMWC.2022.3194322","DOIUrl":"https://doi.org/10.1109/LMWC.2022.3194322","url":null,"abstract":"In a frequency-domain chipless RFID system, the backscattered signal from a tag is directly obtained in the frequency domain over limited bandwidth. However, to reduce the parasitic reflections, it is crucial to obtain the backscattered signal in the time domain. This letter proposes a precise quasi-analytic method, known as the model-based vector fitting (VF) technique, to provide the closed-form equation of the backscattered response in the time domain. The proposed method successfully recovers a tag’s identification (ID) among parasitic reflections using a single tag measurement without requiring prior knowledge about the tag.","PeriodicalId":13130,"journal":{"name":"IEEE Microwave and Wireless Components Letters","volume":"32 1","pages":"1491-1494"},"PeriodicalIF":3.0,"publicationDate":"2022-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"46062221","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-12-01DOI: 10.1109/LMWC.2022.3194805
C. Dachena, A. Fedeli, A. Fanti, M. B. Lodi, G. Fumera, M. Pastorino, A. Randazzo
In this letter, a microwave imaging strategy based on an artificial neural network (ANN) is applied, for the first time, to experimental data gathered from simplified neck phantoms. The ANN is used for solving the underlying inverse scattering problem, with the aim of retrieving the dielectric properties of the neck for monitoring and diagnostic purposes. The ANN is trained using simulated phantoms, to overcome the limited availability of experimental data. First, a simple configuration with a liquid-filled glass beaker is tested. Then, simplified 3-D-printed models of the human neck are considered. The preliminary findings indicate the possibility of training the network with numerical simulations and testing it against experimental measurements.
{"title":"Initial Experimental Tests of an ANN-Based Microwave Imaging Technique for Neck Diagnostics","authors":"C. Dachena, A. Fedeli, A. Fanti, M. B. Lodi, G. Fumera, M. Pastorino, A. Randazzo","doi":"10.1109/LMWC.2022.3194805","DOIUrl":"https://doi.org/10.1109/LMWC.2022.3194805","url":null,"abstract":"In this letter, a microwave imaging strategy based on an artificial neural network (ANN) is applied, for the first time, to experimental data gathered from simplified neck phantoms. The ANN is used for solving the underlying inverse scattering problem, with the aim of retrieving the dielectric properties of the neck for monitoring and diagnostic purposes. The ANN is trained using simulated phantoms, to overcome the limited availability of experimental data. First, a simple configuration with a liquid-filled glass beaker is tested. Then, simplified 3-D-printed models of the human neck are considered. The preliminary findings indicate the possibility of training the network with numerical simulations and testing it against experimental measurements.","PeriodicalId":13130,"journal":{"name":"IEEE Microwave and Wireless Components Letters","volume":"32 1","pages":"1495-1498"},"PeriodicalIF":3.0,"publicationDate":"2022-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"44747192","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-12-01DOI: 10.1109/LMWC.2022.3177656
Xiongyao Luo, W. Feng, Haoshen Zhu, Liang Wu, W. Che, Q. Xue
A millimeter-wave (MMW) variable-gain power amplifier (VGPA) with $P_{mathrm {1,dB}}$ improvement technique is proposed. The proposed VGPA consists of a postdistortion power amplifier (PDPA) and a variable-gain amplifier (VGA), for realizing high output power 1-dB compression point ($P_{mathrm {1,dB}}$ ) and variable gain, respectively. To improve the $P_{mathrm {1,dB}}$ performances, a postdistortion technique with peaking-mode gain response shaping is proposed. This new approach has less amplitude-to-amplitude (AM–AM) distortion. Fabricated in 65-nm CMOS process, the proposed VGPA achieves 16-dBm output $P_{mathrm {1,dB}}$ with 29.5% power added efficiency (PAE) and 16.7-dBm saturated output power ($P_{mathrm {sat}}$ ) with 34% peak PAE. The maximum gain reaches 33.1 dB with 3-dB bandwidth from 23.1 to 29 GHz and 31.1-dB dynamic range of gain adjustment.
{"title":"A Millimeter-Wave Variable-Gain Power Amplifier With P₁ dB Improvement Technique in 65-nm CMOS","authors":"Xiongyao Luo, W. Feng, Haoshen Zhu, Liang Wu, W. Che, Q. Xue","doi":"10.1109/LMWC.2022.3177656","DOIUrl":"https://doi.org/10.1109/LMWC.2022.3177656","url":null,"abstract":"A millimeter-wave (MMW) variable-gain power amplifier (VGPA) with <inline-formula> <tex-math notation=\"LaTeX\">$P_{mathrm {1,dB}}$ </tex-math></inline-formula> improvement technique is proposed. The proposed VGPA consists of a postdistortion power amplifier (PDPA) and a variable-gain amplifier (VGA), for realizing high output power 1-dB compression point (<inline-formula> <tex-math notation=\"LaTeX\">$P_{mathrm {1,dB}}$ </tex-math></inline-formula>) and variable gain, respectively. To improve the <inline-formula> <tex-math notation=\"LaTeX\">$P_{mathrm {1,dB}}$ </tex-math></inline-formula> performances, a postdistortion technique with peaking-mode gain response shaping is proposed. This new approach has less amplitude-to-amplitude (AM–AM) distortion. Fabricated in 65-nm CMOS process, the proposed VGPA achieves 16-dBm output <inline-formula> <tex-math notation=\"LaTeX\">$P_{mathrm {1,dB}}$ </tex-math></inline-formula> with 29.5% power added efficiency (PAE) and 16.7-dBm saturated output power (<inline-formula> <tex-math notation=\"LaTeX\">$P_{mathrm {sat}}$ </tex-math></inline-formula>) with 34% peak PAE. The maximum gain reaches 33.1 dB with 3-dB bandwidth from 23.1 to 29 GHz and 31.1-dB dynamic range of gain adjustment.","PeriodicalId":13130,"journal":{"name":"IEEE Microwave and Wireless Components Letters","volume":"32 1","pages":"1427-1430"},"PeriodicalIF":3.0,"publicationDate":"2022-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"45895185","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-12-01DOI: 10.1109/LMWC.2022.3191116
Kuang-Wei Cheng, Wei-Wei Chen, Shang-De Yang
This letter presents a low-power current-reuse and device-reuse low noise amplifier (LNA) for sub-GHz wideband applications. Based on the shunt-feedback common-gate (SFBCG) hybrid topology and the proposed current/device-reuse shunt-feedback (SFB) technique, $g_{m}$ restriction is alleviated. Moreover, the degree of design freedom is added by coupling the output to the gate of the in-phase current source transistor to activate positive feedback without extra power burden, thereby achieving a higher gain and lower noise design. Implemented in 90-nm CMOS technology, this LNA prototype has an active area of 0.075 mm2. The measurement results show a peak gain of 21.3 dB with 3-dB bandwidth of 50–800 MHz, noise figure of 4.5 dB, third-order intercept point (IIP3) of −7.1 dBm, and power dissipation of 1.2 mW.
{"title":"A Low Power Sub-GHz Wideband LNA Employing Current-Reuse and Device-Reuse Positive Shunt-Feedback Technique","authors":"Kuang-Wei Cheng, Wei-Wei Chen, Shang-De Yang","doi":"10.1109/LMWC.2022.3191116","DOIUrl":"https://doi.org/10.1109/LMWC.2022.3191116","url":null,"abstract":"This letter presents a low-power current-reuse and device-reuse low noise amplifier (LNA) for sub-GHz wideband applications. Based on the shunt-feedback common-gate (SFBCG) hybrid topology and the proposed current/device-reuse shunt-feedback (SFB) technique, $g_{m}$ restriction is alleviated. Moreover, the degree of design freedom is added by coupling the output to the gate of the in-phase current source transistor to activate positive feedback without extra power burden, thereby achieving a higher gain and lower noise design. Implemented in 90-nm CMOS technology, this LNA prototype has an active area of 0.075 mm2. The measurement results show a peak gain of 21.3 dB with 3-dB bandwidth of 50–800 MHz, noise figure of 4.5 dB, third-order intercept point (IIP3) of −7.1 dBm, and power dissipation of 1.2 mW.","PeriodicalId":13130,"journal":{"name":"IEEE Microwave and Wireless Components Letters","volume":"32 1","pages":"1455-1458"},"PeriodicalIF":3.0,"publicationDate":"2022-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"42224718","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-12-01DOI: 10.1109/LMWC.2022.3192925
Chengye Jiang, W. Qiao, Guichen Yang, Falin Liu
Undersampling is an effective way to reduce the cost of digital predistortion (DPD), but it poses challenges for signal alignment, especially for fractional delay alignment. In this letter, a Taylor expansion-based method for fractional delay approximation solution is proposed. To verify the proposed alignment algorithm, the basis manifold regularization (BMR) is introduced to ensure that the DPD can converge to a satisfactory performance even at an ultralow sampling rate. Simulations and experimental tests demonstrate that the proposed method not only has high alignment accuracy but also low complexity in comparison with traditional methods.
{"title":"Efficient Signal Alignment Algorithm for Undersampling Digital Predistortion","authors":"Chengye Jiang, W. Qiao, Guichen Yang, Falin Liu","doi":"10.1109/LMWC.2022.3192925","DOIUrl":"https://doi.org/10.1109/LMWC.2022.3192925","url":null,"abstract":"Undersampling is an effective way to reduce the cost of digital predistortion (DPD), but it poses challenges for signal alignment, especially for fractional delay alignment. In this letter, a Taylor expansion-based method for fractional delay approximation solution is proposed. To verify the proposed alignment algorithm, the basis manifold regularization (BMR) is introduced to ensure that the DPD can converge to a satisfactory performance even at an ultralow sampling rate. Simulations and experimental tests demonstrate that the proposed method not only has high alignment accuracy but also low complexity in comparison with traditional methods.","PeriodicalId":13130,"journal":{"name":"IEEE Microwave and Wireless Components Letters","volume":"32 1","pages":"1487-1490"},"PeriodicalIF":3.0,"publicationDate":"2022-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"45026818","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-12-01DOI: 10.1109/LMWC.2022.3179002
I. Mansour, Marwa Mansour, M. Aboualalaa, A. Allam, A. Abdel-Rahman, R. Pokharel, M. Abo-Zahhad
This work introduces a new topology for designing low-phase noise (PN) dual-band voltage-controlled oscillator (VCO) by proposing orthogonally located inductors in 0.18-$mu text{m}$ CMOS. The inductors are implemented using five metal layers keeping the lowest layer empty to maximize the quality ($Q$ ) factor. The first inductor is two halves shunted octagonal loops using the top layer (M6) and utilized in cross-coupled VCO, while the second inductor is formed by four C-shaped shunted inductors using the lower four layers $text{M}_{mathrm {5-2}}$ and used in current-reuse (CR) VCO. The M6 inductor improves the $Q$ -factor by more than 25%over one loop inductor in the frequency band of interest, while the $text{M}_{mathrm {5-2}}$ inductor uses four shunt layers to boost the $Q$ -factor by 28% in $K$ -band compared to the single-layer inductor. The VCO oscillates from 22.36 to 23.4 GHz with PN of −112.4 dBc/Hz at 1 MHz and figure of merit (FoM) of −188.8 dBc/Hz, while the CR VCO has tuning range from 23.8 to 25.7 GHz with a PN of −107 dBc/Hz at 1 MHz and FoM −185.8 dBc/Hz.
{"title":"Dual-Band VCO Using High Quality Factor Two Orthogonally Located Inductors in 0.18-μm CMOS Technology","authors":"I. Mansour, Marwa Mansour, M. Aboualalaa, A. Allam, A. Abdel-Rahman, R. Pokharel, M. Abo-Zahhad","doi":"10.1109/LMWC.2022.3179002","DOIUrl":"https://doi.org/10.1109/LMWC.2022.3179002","url":null,"abstract":"This work introduces a new topology for designing low-phase noise (PN) dual-band voltage-controlled oscillator (VCO) by proposing orthogonally located inductors in 0.18-<inline-formula> <tex-math notation=\"LaTeX\">$mu text{m}$ </tex-math></inline-formula> CMOS. The inductors are implemented using five metal layers keeping the lowest layer empty to maximize the quality (<inline-formula> <tex-math notation=\"LaTeX\">$Q$ </tex-math></inline-formula>) factor. The first inductor is two halves shunted octagonal loops using the top layer (M6) and utilized in cross-coupled VCO, while the second inductor is formed by four C-shaped shunted inductors using the lower four layers <inline-formula> <tex-math notation=\"LaTeX\">$text{M}_{mathrm {5-2}}$ </tex-math></inline-formula> and used in current-reuse (CR) VCO. The M6 inductor improves the <inline-formula> <tex-math notation=\"LaTeX\">$Q$ </tex-math></inline-formula>-factor by more than 25%over one loop inductor in the frequency band of interest, while the <inline-formula> <tex-math notation=\"LaTeX\">$text{M}_{mathrm {5-2}}$ </tex-math></inline-formula> inductor uses four shunt layers to boost the <inline-formula> <tex-math notation=\"LaTeX\">$Q$ </tex-math></inline-formula>-factor by 28% in <inline-formula> <tex-math notation=\"LaTeX\">$K$ </tex-math></inline-formula>-band compared to the single-layer inductor. The VCO oscillates from 22.36 to 23.4 GHz with PN of −112.4 dBc/Hz at 1 MHz and figure of merit (FoM) of −188.8 dBc/Hz, while the CR VCO has tuning range from 23.8 to 25.7 GHz with a PN of −107 dBc/Hz at 1 MHz and FoM −185.8 dBc/Hz.","PeriodicalId":13130,"journal":{"name":"IEEE Microwave and Wireless Components Letters","volume":"32 1","pages":"1431-1434"},"PeriodicalIF":3.0,"publicationDate":"2022-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"48535950","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-12-01DOI: 10.1109/LMWC.2022.3190701
J. Garrett, B. Tan, C. Chaumont, F. Boussaha, G. Yassin
In this letter, we report the near quantum-limited performance of a 230 GHz endfire superconductor-insulator-superconductor (SIS) mixer utilizing a Nb/Al-AlOx/Nb trilayer. An important feature of this mixer is its use of a unilateral finline for the waveguide-to-planar circuit transition, which allows for a wide radiofrequency (RF) bandwidth, a simple waveguide structure with easy alignment, and for the mixer chip to be aligned along the optical axis. Each of these factors is beneficial in the construction of large-format focal plane arrays. We tested the new finline mixer from 210 to 260 GHz in a liquid helium cryostat at ~4 K. The best recorded noise temperature was approximately twice the quantum limit, which is comparable to conventional radial probe mixers. This suggests that endfire SIS mixers can be used in large format arrays, comprising 100s or even 1000s of SIS mixing elements, while retaining state-of-the-art quantum mixing performance.
{"title":"A 230-GHz Endfire SIS Mixer With Near Quantum-Limited Performance","authors":"J. Garrett, B. Tan, C. Chaumont, F. Boussaha, G. Yassin","doi":"10.1109/LMWC.2022.3190701","DOIUrl":"https://doi.org/10.1109/LMWC.2022.3190701","url":null,"abstract":"In this letter, we report the near quantum-limited performance of a 230 GHz endfire superconductor-insulator-superconductor (SIS) mixer utilizing a Nb/Al-AlOx/Nb trilayer. An important feature of this mixer is its use of a unilateral finline for the waveguide-to-planar circuit transition, which allows for a wide radiofrequency (RF) bandwidth, a simple waveguide structure with easy alignment, and for the mixer chip to be aligned along the optical axis. Each of these factors is beneficial in the construction of large-format focal plane arrays. We tested the new finline mixer from 210 to 260 GHz in a liquid helium cryostat at ~4 K. The best recorded noise temperature was approximately twice the quantum limit, which is comparable to conventional radial probe mixers. This suggests that endfire SIS mixers can be used in large format arrays, comprising 100s or even 1000s of SIS mixing elements, while retaining state-of-the-art quantum mixing performance.","PeriodicalId":13130,"journal":{"name":"IEEE Microwave and Wireless Components Letters","volume":"32 1","pages":"1435-1438"},"PeriodicalIF":3.0,"publicationDate":"2022-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"46737170","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-12-01DOI: 10.1109/LMWC.2022.3193447
Jian Zhang, Xuebing Jiang, Jin Xu, Lingna Yue, H. Yin, Shuangzhu Fang, R. Yang, P.C. Yin, Jinchi Cai, G. Zhao, Wenxiang Wang, Zhenhua Wu, Dazhi Li, Wenxin Liu, Minzhi Huang, Yanyu Wei
In this letter, the modified flat-roofed sine waveguide slow-wave structure (FRSWG-SWS) is proposed for the wideband high-power sub-terahertz traveling-wave tube (sub-THz TWT), which possesses the advantages of wide operating bandwidth, low loss, minimal reflection, and ease of fabrication. The simulation results demonstrate that the transmission parameter is more than −5.0 dB in the frequency range between 210 and 250 GHz. The beam–wave interaction results indicate that the modified FRSWG can provide over 50 W of output power and 30 dB of gain from 205 to 250 GHz with sheet electron beam with a voltage of 20.8 kV and a current of 150 mA. Finally, we use high-speed milling to fabricate the modified FRSWG by the nano-Computer Numerical Control (CNC) technology. The cold test results demonstrate that the modified FRSWG has low loss and good reflection characteristics.
{"title":"Investigation of a Modified Flat-Roofed Sine Waveguide Slow-Wave Structure for Wideband 220-GHz TWT","authors":"Jian Zhang, Xuebing Jiang, Jin Xu, Lingna Yue, H. Yin, Shuangzhu Fang, R. Yang, P.C. Yin, Jinchi Cai, G. Zhao, Wenxiang Wang, Zhenhua Wu, Dazhi Li, Wenxin Liu, Minzhi Huang, Yanyu Wei","doi":"10.1109/LMWC.2022.3193447","DOIUrl":"https://doi.org/10.1109/LMWC.2022.3193447","url":null,"abstract":"In this letter, the modified flat-roofed sine waveguide slow-wave structure (FRSWG-SWS) is proposed for the wideband high-power sub-terahertz traveling-wave tube (sub-THz TWT), which possesses the advantages of wide operating bandwidth, low loss, minimal reflection, and ease of fabrication. The simulation results demonstrate that the transmission parameter is more than −5.0 dB in the frequency range between 210 and 250 GHz. The beam–wave interaction results indicate that the modified FRSWG can provide over 50 W of output power and 30 dB of gain from 205 to 250 GHz with sheet electron beam with a voltage of 20.8 kV and a current of 150 mA. Finally, we use high-speed milling to fabricate the modified FRSWG by the nano-Computer Numerical Control (CNC) technology. The cold test results demonstrate that the modified FRSWG has low loss and good reflection characteristics.","PeriodicalId":13130,"journal":{"name":"IEEE Microwave and Wireless Components Letters","volume":"32 1","pages":"1399-1402"},"PeriodicalIF":3.0,"publicationDate":"2022-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"45205614","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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