Ibrahim Kagan Aksoyak, Matthias Möck, M. Kaynak, A. Ulusoy
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引用次数: 1
Abstract
This letter presents a four-way power combined $D$ -band power amplifier (PA) in 0.13-$\mu \text{m}$ SiGe technology. The conventional cascode topology is modified by adding an additional interstage network between the common-emitter (CE) and common-base (CB) devices. Further techniques, such as power combining and adaptive bias circuits, are implemented to boost the power generation and the efficiency of the amplifier. The realized PA exhibits a saturated output power of 19.6 dBm with a maximum power-added-efficiency (PAE) of 9.5% at 130 GHz, which is a leading-edge performance among the reported silicon (Si) $D$ -band PAs in similar technologies. The small-signal gain peaks at 16 dB and the PA has a 3-dB bandwidth of 18 GHz.
期刊介绍:
The IEEE Microwave and Wireless Components Letters (MWCL) publishes four-page papers (3 pages of text + up to 1 page of references) that focus on microwave theory, techniques and applications as they relate to components, devices, circuits, biological effects, and systems involving the generation, modulation, demodulation, control, transmission, and detection of microwave signals. This includes scientific, technical, medical and industrial activities. Microwave theory and techniques relates to electromagnetic waves in the frequency range of a few MHz and a THz; other spectral regions and wave types are included within the scope of the MWCL whenever basic microwave theory and techniques can yield useful results. Generally, this occurs in the theory of wave propagation in structures with dimensions comparable to a wavelength, and in the related techniques for analysis and design.