Performance Analysis of SOI-Tunnel FET with AlxGa1-xAs Channel Material

Abstract

Tunnel Field-effect transistor (TFETs) has appeared as a promising candidate due to its steep slope (SS<60 mV/dec) and can be used for low power applications. Authors investigated AlxGa1-xAs as the channel material in Silicon-on-insulator (SOI) TFETs and compared with other existing channel materials, SiGe, Ge, Si, Ge, Strained Si, and GaAs. For the entire device study, the mole fraction x = 0.2 has been used in AlxGa1-xAs channel material. The direct energy bandgap for Al0.2Ga0.8As has been used because the mole fraction is less than 0.4. The Al0.2Ga0.8As based device has been analyzed in terms of Direct Current (DC) and Alternating Current (AC) characteristics using the Synopsys TCAD tool. The proposed device offers enhanced switching speed with high on/off ratio of ~1012 and steep subthreshold swing of 30 mv/dec As a channel material,Al0.2Ga0.8As also enhances the miller capacitance of the device, which is one of the essential requirements of the device performance. In next-generation devices, Al0.2Ga0.8As as channel material and TFET device based on this channel material act as a promising contender for low power applications.