Dual-Band VCO Using High Quality Factor Two Orthogonally Located Inductors in 0.18-μm CMOS Technology

IF 2.9 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Microwave and Wireless Components Letters Pub Date : 2022-12-01 DOI:10.1109/LMWC.2022.3179002

I. Mansour, Marwa Mansour, M. Aboualalaa, A. Allam, A. Abdel-Rahman, R. Pokharel, M. Abo-Zahhad

{"title":"Dual-Band VCO Using High Quality Factor Two Orthogonally Located Inductors in 0.18-μm CMOS Technology","authors":"I. Mansour, Marwa Mansour, M. Aboualalaa, A. Allam, A. Abdel-Rahman, R. Pokharel, M. Abo-Zahhad","doi":"10.1109/LMWC.2022.3179002","DOIUrl":null,"url":null,"abstract":"This work introduces a new topology for designing low-phase noise (PN) dual-band voltage-controlled oscillator (VCO) by proposing orthogonally located inductors in 0.18-<inline-formula> <tex-math notation=\"LaTeX\">$\\mu \\text{m}$ </tex-math></inline-formula> CMOS. The inductors are implemented using five metal layers keeping the lowest layer empty to maximize the quality (<inline-formula> <tex-math notation=\"LaTeX\">$Q$ </tex-math></inline-formula>) factor. The first inductor is two halves shunted octagonal loops using the top layer (M6) and utilized in cross-coupled VCO, while the second inductor is formed by four C-shaped shunted inductors using the lower four layers <inline-formula> <tex-math notation=\"LaTeX\">$\\text{M}_{\\mathrm {5-2}}$ </tex-math></inline-formula> and used in current-reuse (CR) VCO. The M6 inductor improves the <inline-formula> <tex-math notation=\"LaTeX\">$Q$ </tex-math></inline-formula>-factor by more than 25%over one loop inductor in the frequency band of interest, while the <inline-formula> <tex-math notation=\"LaTeX\">$\\text{M}_{\\mathrm {5-2}}$ </tex-math></inline-formula> inductor uses four shunt layers to boost the <inline-formula> <tex-math notation=\"LaTeX\">$Q$ </tex-math></inline-formula>-factor by 28% in <inline-formula> <tex-math notation=\"LaTeX\">$K$ </tex-math></inline-formula>-band compared to the single-layer inductor. The VCO oscillates from 22.36 to 23.4 GHz with PN of −112.4 dBc/Hz at 1 MHz and figure of merit (FoM) of −188.8 dBc/Hz, while the CR VCO has tuning range from 23.8 to 25.7 GHz with a PN of −107 dBc/Hz at 1 MHz and FoM −185.8 dBc/Hz.","PeriodicalId":13130,"journal":{"name":"IEEE Microwave and Wireless Components Letters","volume":"32 1","pages":"1431-1434"},"PeriodicalIF":2.9000,"publicationDate":"2022-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Microwave and Wireless Components Letters","FirstCategoryId":"5","ListUrlMain":"https://doi.org/10.1109/LMWC.2022.3179002","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 1

Abstract

This work introduces a new topology for designing low-phase noise (PN) dual-band voltage-controlled oscillator (VCO) by proposing orthogonally located inductors in 0.18-

$\mu \text{m}$

CMOS. The inductors are implemented using five metal layers keeping the lowest layer empty to maximize the quality (

$Q$

) factor. The first inductor is two halves shunted octagonal loops using the top layer (M6) and utilized in cross-coupled VCO, while the second inductor is formed by four C-shaped shunted inductors using the lower four layers

$\text{M}_{\mathrm {5-2}}$

and used in current-reuse (CR) VCO. The M6 inductor improves the

$Q$

-factor by more than 25%over one loop inductor in the frequency band of interest, while the

$\text{M}_{\mathrm {5-2}}$

inductor uses four shunt layers to boost the

$Q$

-factor by 28% in

$K$

-band compared to the single-layer inductor. The VCO oscillates from 22.36 to 23.4 GHz with PN of −112.4 dBc/Hz at 1 MHz and figure of merit (FoM) of −188.8 dBc/Hz, while the CR VCO has tuning range from 23.8 to 25.7 GHz with a PN of −107 dBc/Hz at 1 MHz and FoM −185.8 dBc/Hz.

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采用0.18 μm CMOS技术的高品质因数正交电感双带压控振荡器

本文介绍了一种用于设计低相位噪声（PN）双频压控振荡器（VCO）的新拓扑结构，提出了0.18-$\mu\text{m}$CMOS中正交定位的电感器。电感器使用五个金属层来实现，保持最低层为空以最大化质量（$Q$）因子。第一个电感器是使用顶层（M6）的两个半分流八边形环，并用于交叉耦合的VCO，而第二电感器由使用下面四层的四个C形分流电感器形成$\text{M}_｛\mathrm｛5-2｝｝$并在当前重用（CR）VCO中使用。M6电感器比感兴趣频带中的一个环路电感器将$Q$-因子提高了25%以上，而$\text{M}_｛\mathrm｛5-2｝｝$电感器使用四个分流层，与单层电感器相比，在$K$频带中将$Q$因子提高28%。VCO在22.36至23.4 GHz之间振荡，1 MHz时PN为−112.4 dBc/Hz，品质因数（FoM）为−188.8 dBc/Hz；而CR VCO的调谐范围为23.8至25.7 GHz，1 MHz下PN为−107 dBc/Hz。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Microwave and Wireless Components Letters 工程技术-工程：电子与电气

自引率

13.30%

发文量

376

审稿时长

3.0 months

期刊介绍： The IEEE Microwave and Wireless Components Letters (MWCL) publishes four-page papers (3 pages of text + up to 1 page of references) that focus on microwave theory, techniques and applications as they relate to components, devices, circuits, biological effects, and systems involving the generation, modulation, demodulation, control, transmission, and detection of microwave signals. This includes scientific, technical, medical and industrial activities. Microwave theory and techniques relates to electromagnetic waves in the frequency range of a few MHz and a THz; other spectral regions and wave types are included within the scope of the MWCL whenever basic microwave theory and techniques can yield useful results. Generally, this occurs in the theory of wave propagation in structures with dimensions comparable to a wavelength, and in the related techniques for analysis and design.