Electronic, structural and paramagnetic properties of magnesium telluride

IF 1.1 Q4 QUANTUM SCIENCE & TECHNOLOGY Semiconductor Physics Quantum Electronics & Optoelectronics Pub Date : 2019-03-30 DOI:10.15407/spqeo22.01.005
J. O. Akinlami
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引用次数: 1

Abstract

This study has examined the ground-state electronic, structural and, in addition, paramagnetic properties of semiconductor MgTe in its zinc blende phase by using the density functional theory (DFT). Exchange-correlation potentials have been approximated with the Projected Augmented Wave (PAW) Generalized Gradient Approximation (GGA). From the calculated lattice parameter, we determined the bulk modulus and first pressure derivative. Also, reported are other ground state properties: density of states (DOS), band structure, projected DOS (PDOS) and magnetic properties. A direct large band-gap of 2.358 eV was observed from the band structure that has close concurrence with former reported values. Although this value is also smaller than the reported experimental values, it is the closest of all the calculated values. The magnetic state of the compound was observed to be paramagnetic in the ground state.
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碲化镁的电子、结构和顺磁性能
本研究利用密度泛函理论(DFT)研究了半导体闪锌矿相中MgTe的基态电子、结构以及顺磁性质。交换相关势已经用投影增强波(PAW)广义梯度近似(GGA)进行了近似。根据计算的晶格参数,我们确定了体积模量和一阶压力导数。此外,还报道了其他基态性质:态密度(DOS)、能带结构、投影态密度(PDOS)和磁性。从能带结构中观察到2.358eV的直接大带隙,其与先前报道的值非常一致。尽管该值也小于报告的实验值,但它是所有计算值中最接近的。观察到该化合物的磁性状态在基态是顺磁性的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
CiteScore
1.80
自引率
22.20%
发文量
43
审稿时长
15 weeks
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