Temperature dependence of the electrical performance of SrBi/sub 2/Ta/sub 2/O/sub 9/ for non-volatile memory applications

Abstract

Studies of the temperature dependence of many of the important electrical properties of SBT are presented. These include: (a) the remanent polarization (2P/sub r/), the non-volatile polarization (P/sub nv/), and the coercive field (E/sub C/) all of which are studied as functions of the pulse amplitude; (b) fatigue resistance of 2P/sub r/ and P/sub nv/; (c) the retention; and (d) the current versus voltage behavior. These studies demonstrate that SBT looks very promising for ferroelectric non-volatile memories over the consumer application range (0 to 70/spl deg/C).