Z. M. S. Li, Y. G. Xiao, K. Uehara, M. Lestrade, S. Gao, Y. Fu, Z. Q. Li, Y. Zhou
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引用次数: 2
Abstract
Three-dimensional (3D) modeling of CMOS active pixel image sensor from process to opto-electronic response is reported in this work. Process simulation is performed by Crosslight CSuprem while the optical effect is simulated by finite difference time domain technique and the electronic response by 3D drift-diffusion software APSYS. The electronic responses are presented versus various power intensity and illumination wavelength. The presented results demonstrate a methodological and technical capability for 3D modeling optimization of complex CMOS image sensor.
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