Jing Zhu, Qinsong Qian, Weifeng Sun, Shengli Lu, Yanzhang Lin
{"title":"A novel compact isolated structure for 600V Gate Drive IC","authors":"Jing Zhu, Qinsong Qian, Weifeng Sun, Shengli Lu, Yanzhang Lin","doi":"10.1109/EDSSC.2011.6117671","DOIUrl":null,"url":null,"abstract":"A novel compact isolation structure for high voltage Gate Drive IC is proposed in this paper. As compared with the conventional isolation structure, the proposed structure can achieve the same breakdown capacity with smaller area by adding N-well islands into P-well region which located between LDMOS (Lateral double diffused MOS) and HVJT (high voltage junction termination) region. Moreover, there is no punch through risk in the region between LDMOS and High-side in proposed structure. Finally, a 600V isolation structure is realized with its drift length is only 49µm.","PeriodicalId":6363,"journal":{"name":"2011 IEEE International Conference of Electron Devices and Solid-State Circuits","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2011-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 IEEE International Conference of Electron Devices and Solid-State Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDSSC.2011.6117671","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
A novel compact isolation structure for high voltage Gate Drive IC is proposed in this paper. As compared with the conventional isolation structure, the proposed structure can achieve the same breakdown capacity with smaller area by adding N-well islands into P-well region which located between LDMOS (Lateral double diffused MOS) and HVJT (high voltage junction termination) region. Moreover, there is no punch through risk in the region between LDMOS and High-side in proposed structure. Finally, a 600V isolation structure is realized with its drift length is only 49µm.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
