Yx Chen, J. Liu, K. Xiao, A. Zaslavsky, S. Cristoloveanu, F. Liu, BH. Li, B. Li, J. Wan
{"title":"Unijunction Transistor on Silicon-On-Insulator Substrate","authors":"Yx Chen, J. Liu, K. Xiao, A. Zaslavsky, S. Cristoloveanu, F. Liu, BH. Li, B. Li, J. Wan","doi":"10.1109/ICSICT49897.2020.9278352","DOIUrl":null,"url":null,"abstract":"A unijunction transistor based on fully-depleted silicon-on-insulator substrate is proposed. The device structure is similar to a junction field effect transistor. By conducting the TCAD simulation, we observe sharp switching and large hysteresis in emitter current-emitter voltage curves with the turn-on voltage linearly controlled by the second base voltage. The operation of the device is mainly determined by the emitter-channel PN junction, which is induced by the backgate voltage. The impact of the backgate voltage on the electrical characteristics is analyzed by changes in the channel potential.","PeriodicalId":6727,"journal":{"name":"2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT)","volume":"4 1","pages":"1-3"},"PeriodicalIF":0.0000,"publicationDate":"2020-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICSICT49897.2020.9278352","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
A unijunction transistor based on fully-depleted silicon-on-insulator substrate is proposed. The device structure is similar to a junction field effect transistor. By conducting the TCAD simulation, we observe sharp switching and large hysteresis in emitter current-emitter voltage curves with the turn-on voltage linearly controlled by the second base voltage. The operation of the device is mainly determined by the emitter-channel PN junction, which is induced by the backgate voltage. The impact of the backgate voltage on the electrical characteristics is analyzed by changes in the channel potential.
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