{"title":"InP solar cell improvement by inverse delta-doping","authors":"J. Piprek, K. W. Boer","doi":"10.1109/WCPEC.1994.520657","DOIUrl":null,"url":null,"abstract":"Recombination loss mechanisms in InP homojunction solar cells are analyzed using numerical modeling. To reduce the junction leakage current, it is proposed to introduce a thin undoped layer with low recombination center density near the pn-junction. This inverse delta-doping is found to be most beneficial in low efficiency p/sup +/n-InP cells, improving the open circuit voltage by 50 mV, the fill factor by 0.09, and the efficiency by 2 percentage points.","PeriodicalId":20517,"journal":{"name":"Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC)","volume":"22 1","pages":"1818-1821 vol.2"},"PeriodicalIF":0.0000,"publicationDate":"1994-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/WCPEC.1994.520657","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Recombination loss mechanisms in InP homojunction solar cells are analyzed using numerical modeling. To reduce the junction leakage current, it is proposed to introduce a thin undoped layer with low recombination center density near the pn-junction. This inverse delta-doping is found to be most beneficial in low efficiency p/sup +/n-InP cells, improving the open circuit voltage by 50 mV, the fill factor by 0.09, and the efficiency by 2 percentage points.
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