An Efficient Method for Modeling Parasitic Light Sensitivity in Global Shutter CMOS Image Sensors

F. Pace, O. Marcelot, P. Martin-Gonthier, O. Saint-Pé, M. Bréart de Boisanger, Rose-Marie Sauvage, P. Magnan
{"title":"An Efficient Method for Modeling Parasitic Light Sensitivity in Global Shutter CMOS Image Sensors","authors":"F. Pace, O. Marcelot, P. Martin-Gonthier, O. Saint-Pé, M. Bréart de Boisanger, Rose-Marie Sauvage, P. Magnan","doi":"10.1109/SISPAD.2019.8870558","DOIUrl":null,"url":null,"abstract":"Parasitic Light Sensitivity (PLS) is a key performance parameter for Global Shutter CMOS Image Sensors (GSCIS), which quantifies the sensor sensitivity to light when the shutter is supposed closed. Its modeling and understanding would allow for an optimization in developing future sensors. This paper aims to present an efficient method for 2D modeling PLS in GSCIS through separation of the optical problem from the carriers motion one. The optical problem is solved thanks to Finite-Differences Time-Domain (FDTD) simulations, while solution to the carriers motion problem is given through the application of the Boltzmann Transport Equation (BTE). This method is presented as a faster alternative to the coupled use of FDTD and TCAD simulations: since it is supposed that the two problem solutions are independent, the two simulations can be performed in parallel. The results show good match between the developed method and the TCAD solutions, thus showing fair agreement with experimental data, probably due to a poor knowledge of the back-end process.","PeriodicalId":6755,"journal":{"name":"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"12 1","pages":"1-4"},"PeriodicalIF":0.0000,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SISPAD.2019.8870558","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

Parasitic Light Sensitivity (PLS) is a key performance parameter for Global Shutter CMOS Image Sensors (GSCIS), which quantifies the sensor sensitivity to light when the shutter is supposed closed. Its modeling and understanding would allow for an optimization in developing future sensors. This paper aims to present an efficient method for 2D modeling PLS in GSCIS through separation of the optical problem from the carriers motion one. The optical problem is solved thanks to Finite-Differences Time-Domain (FDTD) simulations, while solution to the carriers motion problem is given through the application of the Boltzmann Transport Equation (BTE). This method is presented as a faster alternative to the coupled use of FDTD and TCAD simulations: since it is supposed that the two problem solutions are independent, the two simulations can be performed in parallel. The results show good match between the developed method and the TCAD solutions, thus showing fair agreement with experimental data, probably due to a poor knowledge of the back-end process.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
一种有效的全局快门CMOS图像传感器寄生光灵敏度建模方法
寄生光灵敏度(PLS)是全局快门CMOS图像传感器(GSCIS)的一个关键性能参数,它量化了当快门关闭时传感器对光的灵敏度。它的建模和理解将允许在开发未来传感器的优化。本文旨在通过将光学问题与载波运动问题分离,提出一种有效的GSCIS中PLS二维建模方法。利用时域有限差分(FDTD)模拟解决了光学问题,利用玻尔兹曼输运方程(BTE)解决了载流子运动问题。这种方法被认为是FDTD和TCAD模拟耦合使用的一种更快的替代方法:因为假设两个问题的解决方案是独立的,所以两个模拟可以并行执行。结果表明,所开发的方法与TCAD解决方案匹配良好,与实验数据吻合较好,这可能是由于对后端过程的了解较差。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Effect of Stacking Faults on the Thermoelectric Figure of Merit of Si Nanowires Effect of Trap on Carrier Transport in InAs FET with Al2 O3 Oxide: DFT-based NEGF simulations Defect creation and Diffusion under electric fields from first-principles: the prototypical case of silicon dioxide Quantum Transport Simulations of the Zero Temperature Coefficient in Gate-all-around Nanowire pFETs Electronic and structural properties of interstitial titanium in crystalline silicon from first-principles simulations
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1