{"title":"Quantum Transport Simulations of the Zero Temperature Coefficient in Gate-all-around Nanowire pFETs","authors":"H. Lee, Junbeom Seo, M. Shin","doi":"10.1109/sispad.2019.8870416","DOIUrl":null,"url":null,"abstract":"We present a full quantum transport study of the zero-temperature coefficient (ZTC) point for sub-10 nm gateall-around nanowire p-type field effect transistors (GAA NW pFETs). The phonon scattering effects are included through the self-consistent Born approximation in the non-equilibrium Green’s function framework. The main findings are that the ZTC point can be present in GAA NW pFETs in sub-10 nm regime and the gate voltage at the ZTC point shows an opposite trend and has an upper limit at a certain gate length. This is due to the interplay between the ballisticity ratio and the ballistic current ratio, which can be explained only by the quantum transport simulations.","PeriodicalId":6755,"journal":{"name":"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"50 1","pages":"1-4"},"PeriodicalIF":0.0000,"publicationDate":"2019-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/sispad.2019.8870416","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract
We present a full quantum transport study of the zero-temperature coefficient (ZTC) point for sub-10 nm gateall-around nanowire p-type field effect transistors (GAA NW pFETs). The phonon scattering effects are included through the self-consistent Born approximation in the non-equilibrium Green’s function framework. The main findings are that the ZTC point can be present in GAA NW pFETs in sub-10 nm regime and the gate voltage at the ZTC point shows an opposite trend and has an upper limit at a certain gate length. This is due to the interplay between the ballisticity ratio and the ballistic current ratio, which can be explained only by the quantum transport simulations.
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