Defect creation and Diffusion under electric fields from first-principles: the prototypical case of silicon dioxide

N. Salles, L. Martin-Samos, Stefano de Gironcoli, L. Giacomazzi, M. Valant, A. Hémeryck, P. Blaise, B. Sklénard, N. Richard
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Abstract

In this paper we study the effect on the electric fields on the formation of bulk Frenkal Pairs and on the migration of oxygen interstitials, IO, and oxygen vacancies, VO, within the framework of Density Functional Theory and Modern Theory of Polarization. At typical OXRRAM field conditions, We show that a significant effect of the electric field is observed only for charged defect. Analyzing the polarization work, we found anomalously high polarization work, for the case of $\mathbf{I}_{\mathcal{O}}^{-2}$, with respect to the classical picture of the electric work of an isolated point charge. This large difference has to be ascribed to collective contributions coming from the environment.
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从第一性原理看电场下缺陷的产生和扩散:二氧化硅的典型案例
本文在密度泛函理论和现代极化理论的框架下,研究了电场对大块Frenkal对的形成以及氧隙IO和氧空位VO迁移的影响。在典型的OXRRAM电场条件下,我们发现电场只对带电缺陷有显著的影响。分析极化功,我们发现$\mathbf{I}_{\mathcal{O}}^{-2}$的极化功相对于孤立点电荷的电功的经典图像有异常高的极化功。这种巨大的差异必须归因于来自环境的集体贡献。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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