{"title":"A 200 MHz, 3 mW, 16-tap mixed-signal FIR filter","authors":"M. Figueroa, Chris Diorio","doi":"10.1109/VLSIC.2000.852894","DOIUrl":null,"url":null,"abstract":"We have built a 16-tap, 7-bit, 200 MHz, mixed-signal FIR filter that consumes 3 mW at 3.3 V. The filter uses p-channel synapse transistors to store the tap coefficients; electron tunneling and hot-electron injection to modify the tap weights; digital registers for the delay line; and multiplying digital-to-analog converters to multiply the digital delay-line values with the analog tap weights. The measured bandwidth is 225 MHz; the measured tap multiplier resolution is 7 bits at 200 MHz. The total die area is 0.13 mm/sup 2/; we can readily scale the design to higher bit resolutions and longer delay-lines.","PeriodicalId":6361,"journal":{"name":"2000 Symposium on VLSI Circuits. Digest of Technical Papers (Cat. No.00CH37103)","volume":"30 1","pages":"214-215"},"PeriodicalIF":0.0000,"publicationDate":"2000-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2000 Symposium on VLSI Circuits. Digest of Technical Papers (Cat. No.00CH37103)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIC.2000.852894","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
We have built a 16-tap, 7-bit, 200 MHz, mixed-signal FIR filter that consumes 3 mW at 3.3 V. The filter uses p-channel synapse transistors to store the tap coefficients; electron tunneling and hot-electron injection to modify the tap weights; digital registers for the delay line; and multiplying digital-to-analog converters to multiply the digital delay-line values with the analog tap weights. The measured bandwidth is 225 MHz; the measured tap multiplier resolution is 7 bits at 200 MHz. The total die area is 0.13 mm/sup 2/; we can readily scale the design to higher bit resolutions and longer delay-lines.