W. Müller, G. Aichmayr, W. Bergner, E. Erben, T. Hecht, C. Kapteyn, A. Kersch, S. Kudelka, F. Lau, J. Luetzen, A. Orth, J. Nuetzel, T. Schloesser, A. Scholz, U. Schroeder, Alexander Sieck, Andrea Spitzer, M. Strasser, Peng Wang, S. Wege, R. Weis
{"title":"Challenges for the DRAM cell scaling to 40nm","authors":"W. Müller, G. Aichmayr, W. Bergner, E. Erben, T. Hecht, C. Kapteyn, A. Kersch, S. Kudelka, F. Lau, J. Luetzen, A. Orth, J. Nuetzel, T. Schloesser, A. Scholz, U. Schroeder, Alexander Sieck, Andrea Spitzer, M. Strasser, Peng Wang, S. Wege, R. Weis","doi":"10.1109/IEDM.2005.1609344","DOIUrl":null,"url":null,"abstract":"This paper reviews the concepts, status and challenges for the DRAM scaling down to 40nm. The technologies that are discussed are the DRAM cell capacitor structures and materials, as well as the cell transistor structures","PeriodicalId":13071,"journal":{"name":"IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.","volume":"4 1","pages":"4 pp.-339"},"PeriodicalIF":0.0000,"publicationDate":"2005-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"87","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2005.1609344","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 87
Abstract
This paper reviews the concepts, status and challenges for the DRAM scaling down to 40nm. The technologies that are discussed are the DRAM cell capacitor structures and materials, as well as the cell transistor structures
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