H. Sim, Hyejung Choi, Dongsoo Lee, M. Chang, Dooho Choi, Y. Son, Eun-Hong Lee, Wonjoo Kim, Yoondong Park, I. Yoo, H. Hwang
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引用次数: 46
Abstract
We have investigated single crystal Nb-doped SrTiO3 in terms of its potential utility in nonvolatile memory applications. Compared with polycrystalline oxide (Nb2O5, ZrO x and Cr-SrTiO3), the Pt/single crystal Nb:SrTiO 3 Schottky junction exhibits excellent memory characteristics including uniformity of set/reset bias, die-to-die reproducibility, data retention at high temperature, reliability under cycle stress, and multi-bit operation characteristics. The switching mechanism might be explained by modulation of the Schottky barrier height by charge trapping at the interface
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