{"title":"Nano-scale leakage characterizations of the γ-APTES/ silica nanoparticles bionanocomposite","authors":"Po-Yen Hsu, Jing-Jenn Lin, Jheng-Jia Jhuang, You-Lin Wu","doi":"10.1109/EDSSC.2011.6117608","DOIUrl":null,"url":null,"abstract":"This work proposes the nano-scale leakage characterizations for post-UV irradiated membrane of a polydimethylsiloxane (PDMS)-treated hydrophobic fumed silica nanoparticles (NPs) and 3-aminopropyltriethoxysilane mixture (γ-APTES+NPs+UV) by conductive atomic-force-microscopy (C-AFM). We found the leakage characterizations of the γ-APTES+NPs+UV are similar to those of dielectric material. Our results show that prolonged UV illumination (120s) and 100: 1 γ-APTES/ silica NPs mixing ratio result in the lowest leakage current and highest breakdown voltage.","PeriodicalId":6363,"journal":{"name":"2011 IEEE International Conference of Electron Devices and Solid-State Circuits","volume":"6 1","pages":"1-2"},"PeriodicalIF":0.0000,"publicationDate":"2011-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 IEEE International Conference of Electron Devices and Solid-State Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDSSC.2011.6117608","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
This work proposes the nano-scale leakage characterizations for post-UV irradiated membrane of a polydimethylsiloxane (PDMS)-treated hydrophobic fumed silica nanoparticles (NPs) and 3-aminopropyltriethoxysilane mixture (γ-APTES+NPs+UV) by conductive atomic-force-microscopy (C-AFM). We found the leakage characterizations of the γ-APTES+NPs+UV are similar to those of dielectric material. Our results show that prolonged UV illumination (120s) and 100: 1 γ-APTES/ silica NPs mixing ratio result in the lowest leakage current and highest breakdown voltage.
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