A. Baldus, A. Bett, U. Blieske, T. Duong, F. Lutz, C. Schetter, W. Wettling, O. Sulima
{"title":"GaAs one-sun and concentrator solar cells based on LPE-ER grown structures","authors":"A. Baldus, A. Bett, U. Blieske, T. Duong, F. Lutz, C. Schetter, W. Wettling, O. Sulima","doi":"10.1109/WCPEC.1994.520544","DOIUrl":null,"url":null,"abstract":"The liquid-phase epitaxy etchback regrowth (LPE-ER) technique was used to grow AlGaAs/GaAs heteroface and AlGaAs/Al/sub y/Ga/sub 1-y/As(0.1<y<0.3) heteroface solar cell structures. The influence of substrate position (vertical or horizontal) during the LPE-ER process was investigated. A model for the growth of the LPE-ER structure in vertical substrate position is proposed. The LPE-ER grown structures were used to fabricate one-sun and concentrator solar cells. Efficiencies of up to 22.4% (AM1.5G) were achieved for solar cells of 4 cm/sup 2/ area. For concentrator application an efficiency of 24.8% (AM1.5, direct) was measured at 105 suns on a 13 mm/sup 2/ solar cell. A 243 cm/sup 2/ aperture area concentrator module consisting of 12 Fresnel lenses and 12 LPE-ER grown GaAs solar cells showed an efficiency of 20.3% under outdoor conditions.","PeriodicalId":20517,"journal":{"name":"Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"1994-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/WCPEC.1994.520544","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
The liquid-phase epitaxy etchback regrowth (LPE-ER) technique was used to grow AlGaAs/GaAs heteroface and AlGaAs/Al/sub y/Ga/sub 1-y/As(0.1
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