A 0.23 µg bias instability and 1.6 µg/Hz1/2 resolution silicon oscillating accelerometer with build-in Σ-Δ frequency-to-digital converter

Jian Zhao, Xi Wang, Yang Zhao, G. Xia, A. Qiu, Yan Su, Y. Xu
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引用次数: 5

Abstract

This paper presents a silicon oscillating accelerometer (SOA) with CMOS readout circuit. To reduce the bias instability, a PLL is employed to sustain the oscillation instead of the conventional auto-amplitude-control (AAC) circuit. A sigma-delta frequency-to-digital converter (FDC) is built in the PLL to produce the digital output. The MEMS sensor and readout circuit are fabricated in 80 μm SOI and standard 0.35 μm CMOS process, respectively. The SOA achieves 0.23 μg bias instability and 1.6 μg/Hz1/2 resolution with ±30 g full-scale, which are equivalent to 4-ppb relative instability and 27-ppb/Hz1/2resolution. In addition, it only consumes 2.7 mW under a 1.5 V supply.
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一个0.23µg偏置不稳定性和1.6µg/Hz1/2分辨率硅振荡加速度计与内置Σ-Δ频率到数字转换器
提出了一种带有CMOS读出电路的硅振荡加速度计(SOA)。为了降低偏置不稳定性,采用锁相环来维持振荡,而不是传统的自幅值控制电路。在锁相环中内置了一个σ - δ频率-数字转换器(FDC)来产生数字输出。MEMS传感器和读出电路分别采用80 μm SOI和标准0.35 μm CMOS工艺制造。在±30 g满量程条件下,SOA的相对不稳定性为0.23 μg,分辨率为1.6 μg/Hz1/2,相当于相对不稳定性为4 ppb,分辨率为27 ppb/Hz1/2。此外,它在1.5 V电源下仅消耗2.7 mW。
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