J. Wollweber, D. Schulz, W. Schroder, N. Abrosimov
{"title":"The growth of Si/sub x/Ge/sub 1-x/-crystals for infrared solar cell applications","authors":"J. Wollweber, D. Schulz, W. Schroder, N. Abrosimov","doi":"10.1109/WCPEC.1994.520202","DOIUrl":null,"url":null,"abstract":"Monocrystalline Si/sub x/Ge/sub 1-x/ alloys may be a powerful material for infrared solar cell applications. In comparison with pure Si, Ruiz et al. (1994) have shown that SiGe-solar cells should increase their efficiency by 2% for x=0.5. However the optimum is quite broad and the maximum of this benefit may be reached with low Ge content cells. On the other hand the availability of a large quantity of SiGe-bulk crystals through the whole composition range is suitable for studies of fundamental properties of SiGe alloys. The present work focuses on new results in the growth of SiGe-single crystals prepared by two methods: (i) an RF-heated float zone-technique; and (ii) a conventional Czochralski-technique.","PeriodicalId":20517,"journal":{"name":"Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"1994-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/WCPEC.1994.520202","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Monocrystalline Si/sub x/Ge/sub 1-x/ alloys may be a powerful material for infrared solar cell applications. In comparison with pure Si, Ruiz et al. (1994) have shown that SiGe-solar cells should increase their efficiency by 2% for x=0.5. However the optimum is quite broad and the maximum of this benefit may be reached with low Ge content cells. On the other hand the availability of a large quantity of SiGe-bulk crystals through the whole composition range is suitable for studies of fundamental properties of SiGe alloys. The present work focuses on new results in the growth of SiGe-single crystals prepared by two methods: (i) an RF-heated float zone-technique; and (ii) a conventional Czochralski-technique.
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